Layered Ruthenium Oxides: From Band Metal to Mott Insulator

A. V. Puchkov, M. C. Schabel, D. N. Basov, T. Startseva, G. Cao, T. Timusk, Z. X. Shen

Research output: Contribution to journalArticle

100 Scopus citations


We present results of the first optical and angle-resolved photoemission study on a layered ruthenium oxide system with various Ca/Sr substitution levels. Using two-plane (Sr1-xCax)3Ru2O7 and one-plane Ca2RuO4 crystals we were able to study evolution of the electronic properties in a range from a band metal 8(Sr3Ru2O7) to a “bad” metal (Ca3Ru2O7) to a Mott-Hubbard insulator (Ca2)RuO4). Apart from a Mott-Hubbard metal-insulator transition (MIT), we have uncovered a qualitative change of the electronic properties at a critical x=0.33. We suggest that the latter is a result of a quantum phase transition into an antiferromagnetic phase that precedes the real Mott-Hubbard MIT.

Original languageEnglish (US)
Pages (from-to)2747-2750
Number of pages4
JournalPhysical Review Letters
Issue number13
StatePublished - Sep 28 1998

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Layered Ruthenium Oxides: From Band Metal to Mott Insulator'. Together they form a unique fingerprint.

  • Cite this

    Puchkov, A. V., Schabel, M. C., Basov, D. N., Startseva, T., Cao, G., Timusk, T., & Shen, Z. X. (1998). Layered Ruthenium Oxides: From Band Metal to Mott Insulator. Physical Review Letters, 81(13), 2747-2750.