Electric field directed assembly of an InGaAs LED onto silicon circuitry

C. F. Edman; R. B. Swint; C. Gurtner; R. E. Formosa; S. D. Roh; K. E. Lee; P. D. Swanson; D. E. Ackley; J. J. Coleman; M. J. Heller

doi:10.1109/68.874234

Electric field directed assembly of an InGaAs LED onto silicon circuitry

C. F. Edman, R. B. Swint, C. Gurtner, R. E. Formosa, S. D. Roh, K. E. Lee, P. D. Swanson, D. E. Ackley, J. J. Coleman, M. J. Heller

Research output: Contribution to journal › Article › peer-review

61 Scopus citations

Abstract

In this letter, we demonstrate an electrophoretic process for assembling very small devices on a silicon circuit. A 20-μm diameter InGaAs LED was fabricated and then released from the substrate by etching a sacrificial layer underneath the diode structure. The diode, placed into a buffer solution over the silicon circuit, was positioned onto the circuit's tin/lead contact electrodes by biasing the contacts to establish an electrophoretic current in the buffer solution. Following removal from the buffer solution, the assembly was heated to reflow the solder. Circuit formation and LED activation is demonstrated by forward biasing the LED using the silicon circuit's contacts.

Original language	English (US)
Pages (from-to)	1198-1200
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	12
Issue number	9
DOIs	https://doi.org/10.1109/68.874234
State	Published - Sep 2000
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/68.874234

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title = "Electric field directed assembly of an InGaAs LED onto silicon circuitry",

abstract = "In this letter, we demonstrate an electrophoretic process for assembling very small devices on a silicon circuit. A 20-μm diameter InGaAs LED was fabricated and then released from the substrate by etching a sacrificial layer underneath the diode structure. The diode, placed into a buffer solution over the silicon circuit, was positioned onto the circuit's tin/lead contact electrodes by biasing the contacts to establish an electrophoretic current in the buffer solution. Following removal from the buffer solution, the assembly was heated to reflow the solder. Circuit formation and LED activation is demonstrated by forward biasing the LED using the silicon circuit's contacts.",

author = "Edman, {C. F.} and Swint, {R. B.} and C. Gurtner and Formosa, {R. E.} and Roh, {S. D.} and Lee, {K. E.} and Swanson, {P. D.} and Ackley, {D. E.} and Coleman, {J. J.} and Heller, {M. J.}",

note = "Funding Information: Manuscript received March 20, 2000; revised May 19, 2000. This work was supported by the Air Force Research Laboratory, Rome, NY. C. F. Edman, C. Gurtner, R. E. Formosa, P. D. Swanson, D. E. Ackley, and M. J. Heller are with the Nanogen Inc., San Diego, CA 92121 USA. R. B. Swint, S. D. Roh, K. E. Lee, and J. J. Coleman are with the Microelectronics Laboratory, University of Illinois, Urbana, IL 61801 USA. Publisher Item Identifier S 1041-1135(00)07454-1.",

year = "2000",

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doi = "10.1109/68.874234",

language = "English (US)",

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pages = "1198--1200",

journal = "IEEE Photonics Technology Letters",

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T1 - Electric field directed assembly of an InGaAs LED onto silicon circuitry

AU - Edman, C. F.

AU - Swint, R. B.

AU - Gurtner, C.

AU - Formosa, R. E.

AU - Roh, S. D.

AU - Lee, K. E.

AU - Swanson, P. D.

AU - Ackley, D. E.

AU - Coleman, J. J.

AU - Heller, M. J.

N1 - Funding Information: Manuscript received March 20, 2000; revised May 19, 2000. This work was supported by the Air Force Research Laboratory, Rome, NY. C. F. Edman, C. Gurtner, R. E. Formosa, P. D. Swanson, D. E. Ackley, and M. J. Heller are with the Nanogen Inc., San Diego, CA 92121 USA. R. B. Swint, S. D. Roh, K. E. Lee, and J. J. Coleman are with the Microelectronics Laboratory, University of Illinois, Urbana, IL 61801 USA. Publisher Item Identifier S 1041-1135(00)07454-1.

PY - 2000/9

Y1 - 2000/9

N2 - In this letter, we demonstrate an electrophoretic process for assembling very small devices on a silicon circuit. A 20-μm diameter InGaAs LED was fabricated and then released from the substrate by etching a sacrificial layer underneath the diode structure. The diode, placed into a buffer solution over the silicon circuit, was positioned onto the circuit's tin/lead contact electrodes by biasing the contacts to establish an electrophoretic current in the buffer solution. Following removal from the buffer solution, the assembly was heated to reflow the solder. Circuit formation and LED activation is demonstrated by forward biasing the LED using the silicon circuit's contacts.

AB - In this letter, we demonstrate an electrophoretic process for assembling very small devices on a silicon circuit. A 20-μm diameter InGaAs LED was fabricated and then released from the substrate by etching a sacrificial layer underneath the diode structure. The diode, placed into a buffer solution over the silicon circuit, was positioned onto the circuit's tin/lead contact electrodes by biasing the contacts to establish an electrophoretic current in the buffer solution. Following removal from the buffer solution, the assembly was heated to reflow the solder. Circuit formation and LED activation is demonstrated by forward biasing the LED using the silicon circuit's contacts.

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JO - IEEE Photonics Technology Letters

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Electric field directed assembly of an InGaAs LED onto silicon circuitry

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