Electric field directed assembly of an InGaAs LED onto silicon circuitry

C. F. Edman, R. B. Swint, C. Gurtner, R. E. Formosa, S. D. Roh, K. E. Lee, P. D. Swanson, D. E. Ackley, J. J. Coleman, M. J. Heller

Research output: Contribution to journalArticle

51 Scopus citations

Abstract

In this letter, we demonstrate an electrophoretic process for assembling very small devices on a silicon circuit. A 20-μm diameter InGaAs LED was fabricated and then released from the substrate by etching a sacrificial layer underneath the diode structure. The diode, placed into a buffer solution over the silicon circuit, was positioned onto the circuit's tin/lead contact electrodes by biasing the contacts to establish an electrophoretic current in the buffer solution. Following removal from the buffer solution, the assembly was heated to reflow the solder. Circuit formation and LED activation is demonstrated by forward biasing the LED using the silicon circuit's contacts.

Original languageEnglish (US)
Pages (from-to)1198-1200
Number of pages3
JournalIEEE Photonics Technology Letters
Volume12
Issue number9
DOIs
StatePublished - Sep 1 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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    Edman, C. F., Swint, R. B., Gurtner, C., Formosa, R. E., Roh, S. D., Lee, K. E., Swanson, P. D., Ackley, D. E., Coleman, J. J., & Heller, M. J. (2000). Electric field directed assembly of an InGaAs LED onto silicon circuitry. IEEE Photonics Technology Letters, 12(9), 1198-1200. https://doi.org/10.1109/68.874234