A CMOS STI-bound single-photon avalanche diode with 27-ps timing resolution and a reduced diffusion tail

Mark J. Hsu, Hod Finkelstein, Sadik Esener

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Single-photon avalanche diodes (SPADs) measure individual photons' time of arrival. Low detector jitter is required in many SPAD applications. This letter describes a method for significantly reducing SPAD jitter using an area-efficient shallow-trench-isolation guard ring. The structure prevents lateral drift and diffusion of charge carriers, resulting in improved timing resolution. Experimental results of the device, fabricated in a 0.18- μm CMOS technology, are presented. The timing resolution of the SPAD is 27-ps full-width at half-maximum. Importantly, the diffusion tail exhibits only 96-ps full-width at hundredth-maximum, a three times improvement over previously published SPAD results. The reduced jitter can be translated to improved bit error rates in quantum key distribution systems, faster bit rates in pulse position modulation optical links, and greater contrast in high-resolution fluorescence lifetime imaging microscopy.

Original languageEnglish (US)
Pages (from-to)641-643
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number6
DOIs
StatePublished - 2009
Externally publishedYes

Fingerprint

Avalanche diodes
Photons
Jitter
Quantum cryptography
Pulse position modulation
Optical links
Full width at half maximum
Charge carriers
Bit error rate
Microscopic examination
Fluorescence
Detectors
Imaging techniques

Keywords

  • Avalanche breakdown
  • Avalanche photodiodes
  • Cryptography
  • Fluorescence
  • Jitter
  • Pulse position modulation
  • Silicon radiation detectors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

A CMOS STI-bound single-photon avalanche diode with 27-ps timing resolution and a reduced diffusion tail. / Hsu, Mark J.; Finkelstein, Hod; Esener, Sadik.

In: IEEE Electron Device Letters, Vol. 30, No. 6, 2009, p. 641-643.

Research output: Contribution to journalArticle

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