Abstract
We have demonstrated, the first time to our knowledge, a low-input intensity high-contrast (10:1) optical AND gate based on the differential gain (optical bistability) observed in an 850 nm GaAs vertical-cavity semiconductor optical amplifier (VCSOA). The input switching power is about 6 μW, which equals to the intensity of 16nW/μm2. It is about 2 orders of magnitude lower than in in-plane semiconductor optical amplifiers. In the experiment the device also shows an optical gain of 10 dB.
Original language | English (US) |
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Pages (from-to) | 383-387 |
Number of pages | 5 |
Journal | Optics Communications |
Volume | 219 |
Issue number | 1-6 |
DOIs | |
State | Published - Apr 15 2003 |
Externally published | Yes |
Keywords
- Amplifiers
- Light emitting devices
- Optical bistability
- Optical logical elements
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering