Two-dimensional spatial light modulators fabricated in Si/PLZT

Tsen Hwang Lin, A. Ersen, J. H. Wang, S. Dasgupta, Sadik Esener, S. H. Lee

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Abstract

We report in this paper the use of Si/PLZT technology in the fabrication of 2-D electrically and optically addressed spatial light modulators. First, a 12 X 12 electrically matrix addressed array was fabricated using simultaneous laser assisted diffusion and crystallization. Then, NMOS transistors exhibiting electron mobility of 550 cm2/V-s were fabricated in each unit cell of the matrix array and used to control the PLZT modulator. A dynamic range of 35:1 was achieved. A 16 X 16 optically addressed SLM array was also fabricated. In this case, to improve the optical sensitivity, a three-transistor CMOS detector-amplifier circuit was included in each unit cell of the array.

Original languageEnglish (US)
Pages (from-to)1595-1603
Number of pages9
JournalApplied Optics
Volume29
Issue number11
DOIs
StatePublished - Apr 10 1990
Externally publishedYes

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ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Lin, T. H., Ersen, A., Wang, J. H., Dasgupta, S., Esener, S., & Lee, S. H. (1990). Two-dimensional spatial light modulators fabricated in Si/PLZT. Applied Optics, 29(11), 1595-1603. https://doi.org/10.1364/AO.29.001595