Two-dimensional spatial light modulators fabricated in Si/PLZT

Tsen Hwang Lin; A. Ersen; J. H. Wang; S. Dasgupta; S. Esener; S. H. Lee

doi:10.1364/AO.29.001595

Two-dimensional spatial light modulators fabricated in Si/PLZT

Tsen Hwang Lin, A. Ersen, J. H. Wang, S. Dasgupta, S. Esener, S. H. Lee

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

We report in this paper the use of Si/PLZT technology in the fabrication of 2-D electrically and optically addressed spatial light modulators. First, a 12 X 12 electrically matrix addressed array was fabricated using simultaneous laser assisted diffusion and crystallization. Then, NMOS transistors exhibiting electron mobility of 550 cm²/V-s were fabricated in each unit cell of the matrix array and used to control the PLZT modulator. A dynamic range of 35:1 was achieved. A 16 X 16 optically addressed SLM array was also fabricated. In this case, to improve the optical sensitivity, a three-transistor CMOS detector-amplifier circuit was included in each unit cell of the array.

Original language	English (US)
Pages (from-to)	1595-1603
Number of pages	9
Journal	Applied Optics
Volume	29
Issue number	11
DOIs	https://doi.org/10.1364/AO.29.001595
State	Published - Apr 10 1990
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Engineering (miscellaneous)
Electrical and Electronic Engineering

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abstract = "We report in this paper the use of Si/PLZT technology in the fabrication of 2-D electrically and optically addressed spatial light modulators. First, a 12 X 12 electrically matrix addressed array was fabricated using simultaneous laser assisted diffusion and crystallization. Then, NMOS transistors exhibiting electron mobility of 550 cm2/V-s were fabricated in each unit cell of the matrix array and used to control the PLZT modulator. A dynamic range of 35:1 was achieved. A 16 X 16 optically addressed SLM array was also fabricated. In this case, to improve the optical sensitivity, a three-transistor CMOS detector-amplifier circuit was included in each unit cell of the array.",

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AU - Lin, Tsen Hwang

AU - Ersen, A.

AU - Wang, J. H.

AU - Dasgupta, S.

AU - Esener, S.

AU - Lee, S. H.

PY - 1990/4/10

Y1 - 1990/4/10

N2 - We report in this paper the use of Si/PLZT technology in the fabrication of 2-D electrically and optically addressed spatial light modulators. First, a 12 X 12 electrically matrix addressed array was fabricated using simultaneous laser assisted diffusion and crystallization. Then, NMOS transistors exhibiting electron mobility of 550 cm2/V-s were fabricated in each unit cell of the matrix array and used to control the PLZT modulator. A dynamic range of 35:1 was achieved. A 16 X 16 optically addressed SLM array was also fabricated. In this case, to improve the optical sensitivity, a three-transistor CMOS detector-amplifier circuit was included in each unit cell of the array.

AB - We report in this paper the use of Si/PLZT technology in the fabrication of 2-D electrically and optically addressed spatial light modulators. First, a 12 X 12 electrically matrix addressed array was fabricated using simultaneous laser assisted diffusion and crystallization. Then, NMOS transistors exhibiting electron mobility of 550 cm2/V-s were fabricated in each unit cell of the matrix array and used to control the PLZT modulator. A dynamic range of 35:1 was achieved. A 16 X 16 optically addressed SLM array was also fabricated. In this case, to improve the optical sensitivity, a three-transistor CMOS detector-amplifier circuit was included in each unit cell of the array.

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Two-dimensional spatial light modulators fabricated in Si/PLZT

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