Structure of low-coverage phases of Al, Ga, and in on Si(100)

John E. Northrup, M. C. Schabel, C. J. Karlsson, R. I.G. Uhrberg

Research output: Contribution to journalArticle

130 Scopus citations

Abstract

The atomic structures of the low-coverage 2×2 phases of Al, Ga, and In on Si(100) were determined on the basis of first-principles total-energy calculations and angle-resolved photoemission experiments. The proposed structure consists of rows of ad-dimers, with the ad-dimers oriented parallel to the underlying Si dimers. Angle-resolved photoemission experiments performed for Si(100)2×2:ln are in good agreement with the calculated surface-state dispersions for the parallel ad-dimer model. The existence of lower coverage 3×2 and 5×2 phases results from repulsive interactions between neighboring rows of ad-dimers.

Original languageEnglish (US)
Pages (from-to)13799-13802
Number of pages4
JournalPhysical Review B
Volume44
Issue number24
DOIs
StatePublished - Jan 1 1991

ASJC Scopus subject areas

  • Condensed Matter Physics

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