Structure of low-coverage phases of Al, Ga, and in on Si(100)

John E. Northrup, Matthias Schabel, C. J. Karlsson, R. I G Uhrberg

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130 Citations (Scopus)

Abstract

The atomic structures of the low-coverage 2×2 phases of Al, Ga, and In on Si(100) were determined on the basis of first-principles total-energy calculations and angle-resolved photoemission experiments. The proposed structure consists of rows of ad-dimers, with the ad-dimers oriented parallel to the underlying Si dimers. Angle-resolved photoemission experiments performed for Si(100)2×2:ln are in good agreement with the calculated surface-state dispersions for the parallel ad-dimer model. The existence of lower coverage 3×2 and 5×2 phases results from repulsive interactions between neighboring rows of ad-dimers.

Original languageEnglish (US)
Pages (from-to)13799-13802
Number of pages4
JournalPhysical Review B
Volume44
Issue number24
DOIs
StatePublished - 1991
Externally publishedYes

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dimers
photoelectric emission
atomic structure
interactions
energy

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Structure of low-coverage phases of Al, Ga, and in on Si(100). / Northrup, John E.; Schabel, Matthias; Karlsson, C. J.; Uhrberg, R. I G.

In: Physical Review B, Vol. 44, No. 24, 1991, p. 13799-13802.

Research output: Contribution to journalArticle

Northrup, JE, Schabel, M, Karlsson, CJ & Uhrberg, RIG 1991, 'Structure of low-coverage phases of Al, Ga, and in on Si(100)', Physical Review B, vol. 44, no. 24, pp. 13799-13802. https://doi.org/10.1103/PhysRevB.44.13799
Northrup, John E. ; Schabel, Matthias ; Karlsson, C. J. ; Uhrberg, R. I G. / Structure of low-coverage phases of Al, Ga, and in on Si(100). In: Physical Review B. 1991 ; Vol. 44, No. 24. pp. 13799-13802.
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