Abstract
Mobile ions like sodium are known to cause instabilities in metal oxide semiconductor devices. Phosphosilicate glasses (P glasses) have been used as passivating layers to isolate the active devices from such contamination. In this study we have examined the effectiveness of tetraethylorthosilicate plasma-enhanced chemical vapor deposited P glasses, as the barrier to sodium diffusion, as a function of the phosphorus concentration. High-frequency capacitance versus voltage (C-V) measurements, bias-temperature measurements, C-V measurements after etch back, and current versus voltage (I-V) measurements were performed. The results of these C-V and I-V studies on P-glass samples purposely contaminated with sodium and annealed indicate that 2-4 wt % of phosphorus is sufficient to passivate successfully against sodium.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2458-2461 |
| Number of pages | 4 |
| Journal | Journal of Applied Physics |
| Volume | 73 |
| Issue number | 5 |
| DOIs | |
| State | Published - 1993 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Sodium passivation dependence on phosphorus concentration in tetraethylorthosilicate plasma-enhanced chemical vapor deposited phosphosilicate glasses. / Kalpathy-Cramer, Jayashree; Murarka, S. P.; Srikrishnan, K. V.; Patrick, W.
In: Journal of Applied Physics, Vol. 73, No. 5, 1993, p. 2458-2461.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Sodium passivation dependence on phosphorus concentration in tetraethylorthosilicate plasma-enhanced chemical vapor deposited phosphosilicate glasses
AU - Kalpathy-Cramer, Jayashree
AU - Murarka, S. P.
AU - Srikrishnan, K. V.
AU - Patrick, W.
PY - 1993
Y1 - 1993
N2 - Mobile ions like sodium are known to cause instabilities in metal oxide semiconductor devices. Phosphosilicate glasses (P glasses) have been used as passivating layers to isolate the active devices from such contamination. In this study we have examined the effectiveness of tetraethylorthosilicate plasma-enhanced chemical vapor deposited P glasses, as the barrier to sodium diffusion, as a function of the phosphorus concentration. High-frequency capacitance versus voltage (C-V) measurements, bias-temperature measurements, C-V measurements after etch back, and current versus voltage (I-V) measurements were performed. The results of these C-V and I-V studies on P-glass samples purposely contaminated with sodium and annealed indicate that 2-4 wt % of phosphorus is sufficient to passivate successfully against sodium.
AB - Mobile ions like sodium are known to cause instabilities in metal oxide semiconductor devices. Phosphosilicate glasses (P glasses) have been used as passivating layers to isolate the active devices from such contamination. In this study we have examined the effectiveness of tetraethylorthosilicate plasma-enhanced chemical vapor deposited P glasses, as the barrier to sodium diffusion, as a function of the phosphorus concentration. High-frequency capacitance versus voltage (C-V) measurements, bias-temperature measurements, C-V measurements after etch back, and current versus voltage (I-V) measurements were performed. The results of these C-V and I-V studies on P-glass samples purposely contaminated with sodium and annealed indicate that 2-4 wt % of phosphorus is sufficient to passivate successfully against sodium.
UR - http://www.scopus.com/inward/record.url?scp=2942705552&partnerID=8YFLogxK
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U2 - 10.1063/1.353104
DO - 10.1063/1.353104
M3 - Article
AN - SCOPUS:2942705552
VL - 73
SP - 2458
EP - 2461
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 5
ER -