Rayleigh instability induced SiC/SiO 2 necklace like nanostructures

Mikhael Bechelany, Jessica McQuiston, Arnaud Brioude, David Cornu, Philippe Miele

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

SiC@SiO 2 nanocables (NCs) were annealed under a nitrogen flow at 1400 °C. Structural and chemical characterization by SEM, HRTEM, EDX, and XRD show that the heat treatment led to the dewetting of SiO 2 and the formation of SiC/SiO 2 pearl necklace-like nanostructures (NSs). The dewetting mechanism has been attributed mainly to the Rayleigh instability. These NSs could have a wide range of applications in different fields such as nanocomposites, electronics, sensors, drug release, and light emitting diodes.

Original languageEnglish (US)
Pages (from-to)7744-7748
Number of pages5
JournalCrystEngComm
Volume14
Issue number22
DOIs
StatePublished - Nov 21 2012
Externally publishedYes

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drying
Nanostructures
Light emitting diodes
Energy dispersive spectroscopy
Nanocomposites
nanocomposites
drugs
heat treatment
Electronic equipment
Nitrogen
light emitting diodes
Heat treatment
nitrogen
Scanning electron microscopy
scanning electron microscopy
sensors
Sensors
electronics
Pharmaceutical Preparations

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Rayleigh instability induced SiC/SiO 2 necklace like nanostructures . / Bechelany, Mikhael; McQuiston, Jessica; Brioude, Arnaud; Cornu, David; Miele, Philippe.

In: CrystEngComm, Vol. 14, No. 22, 21.11.2012, p. 7744-7748.

Research output: Contribution to journalArticle

Bechelany, M, McQuiston, J, Brioude, A, Cornu, D & Miele, P 2012, ' Rayleigh instability induced SiC/SiO 2 necklace like nanostructures ', CrystEngComm, vol. 14, no. 22, pp. 7744-7748. https://doi.org/10.1039/c2ce25636c
Bechelany, Mikhael ; McQuiston, Jessica ; Brioude, Arnaud ; Cornu, David ; Miele, Philippe. / Rayleigh instability induced SiC/SiO 2 necklace like nanostructures In: CrystEngComm. 2012 ; Vol. 14, No. 22. pp. 7744-7748.
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