Electro-absorption modulation is achieved at or near a wavelength of 1.06 μm with InxAlyGa1-x-yAs/InxGa1-xAs multiple-quantum-well (MQW) structures grown on GaAs substrates. The lattice mismatch (close to 2%) between the MQW and the substrate is accommodated by a compositional-step-graded buffer array. A dislocation density of less than 107/cm2 is estimated for the MQW region. For 80 to 100; well widths, a maximum electro-absorption coefficient of 8000 cm-1 with an applied voltage of 15 V is obtained.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering