Quantum-Confined Stark Effect Modulators at 1.06 μm on GaAs

C. Fan, D. W. Shih, M. W. Hansen, Sadik Esener, H. H. Wieder

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Electro-absorption modulation is achieved at or near a wavelength of 1.06 μm with InxAlyGa1-x-yAs/InxGa1-xAs multiple-quantum-well (MQW) structures grown on GaAs substrates. The lattice mismatch (close to 2%) between the MQW and the substrate is accommodated by a compositional-step-graded buffer array. A dislocation density of less than 107/cm2 is estimated for the MQW region. For 80 to 100; well widths, a maximum electro-absorption coefficient of 8000 cm-1 with an applied voltage of 15 V is obtained.

Original languageEnglish (US)
Pages (from-to)1383-1385
Number of pages3
JournalIEEE Photonics Technology Letters
Volume5
Issue number12
DOIs
StatePublished - 1993
Externally publishedYes

Fingerprint

Stark effect
Semiconductor quantum wells
Modulators
modulators
quantum wells
Lattice mismatch
Substrates
absorptivity
Buffers
buffers
Modulation
modulation
Wavelength
Electric potential
electric potential
wavelengths
gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

Cite this

Quantum-Confined Stark Effect Modulators at 1.06 μm on GaAs. / Fan, C.; Shih, D. W.; Hansen, M. W.; Esener, Sadik; Wieder, H. H.

In: IEEE Photonics Technology Letters, Vol. 5, No. 12, 1993, p. 1383-1385.

Research output: Contribution to journalArticle

Fan, C. ; Shih, D. W. ; Hansen, M. W. ; Esener, Sadik ; Wieder, H. H. / Quantum-Confined Stark Effect Modulators at 1.06 μm on GaAs. In: IEEE Photonics Technology Letters. 1993 ; Vol. 5, No. 12. pp. 1383-1385.
@article{3a269f786ec948aeae59d97e00bffd35,
title = "Quantum-Confined Stark Effect Modulators at 1.06 μm on GaAs",
abstract = "Electro-absorption modulation is achieved at or near a wavelength of 1.06 μm with InxAlyGa1-x-yAs/InxGa1-xAs multiple-quantum-well (MQW) structures grown on GaAs substrates. The lattice mismatch (close to 2{\%}) between the MQW and the substrate is accommodated by a compositional-step-graded buffer array. A dislocation density of less than 107/cm2 is estimated for the MQW region. For 80 to 100; well widths, a maximum electro-absorption coefficient of 8000 cm-1 with an applied voltage of 15 V is obtained.",
author = "C. Fan and Shih, {D. W.} and Hansen, {M. W.} and Sadik Esener and Wieder, {H. H.}",
year = "1993",
doi = "10.1109/68.262548",
language = "English (US)",
volume = "5",
pages = "1383--1385",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",

}

TY - JOUR

T1 - Quantum-Confined Stark Effect Modulators at 1.06 μm on GaAs

AU - Fan, C.

AU - Shih, D. W.

AU - Hansen, M. W.

AU - Esener, Sadik

AU - Wieder, H. H.

PY - 1993

Y1 - 1993

N2 - Electro-absorption modulation is achieved at or near a wavelength of 1.06 μm with InxAlyGa1-x-yAs/InxGa1-xAs multiple-quantum-well (MQW) structures grown on GaAs substrates. The lattice mismatch (close to 2%) between the MQW and the substrate is accommodated by a compositional-step-graded buffer array. A dislocation density of less than 107/cm2 is estimated for the MQW region. For 80 to 100; well widths, a maximum electro-absorption coefficient of 8000 cm-1 with an applied voltage of 15 V is obtained.

AB - Electro-absorption modulation is achieved at or near a wavelength of 1.06 μm with InxAlyGa1-x-yAs/InxGa1-xAs multiple-quantum-well (MQW) structures grown on GaAs substrates. The lattice mismatch (close to 2%) between the MQW and the substrate is accommodated by a compositional-step-graded buffer array. A dislocation density of less than 107/cm2 is estimated for the MQW region. For 80 to 100; well widths, a maximum electro-absorption coefficient of 8000 cm-1 with an applied voltage of 15 V is obtained.

UR - http://www.scopus.com/inward/record.url?scp=0027810433&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027810433&partnerID=8YFLogxK

U2 - 10.1109/68.262548

DO - 10.1109/68.262548

M3 - Article

AN - SCOPUS:0027810433

VL - 5

SP - 1383

EP - 1385

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 12

ER -