Quantum-Confined Stark Effect Modulators at 1.06 μm on GaAs

C. Fan, D. W. Shih, M. W. Hansen, S. C. Esener, H. H. Wieder

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

Electro-absorption modulation is achieved at or near a wavelength of 1.06 μm with InxAlyGa1-x-yAs/InxGa1-xAs multiple-quantum-well (MQW) structures grown on GaAs substrates. The lattice mismatch (close to 2%) between the MQW and the substrate is accommodated by a compositional-step-graded buffer array. A dislocation density of less than 107/cm2 is estimated for the MQW region. For 80 to 100; well widths, a maximum electro-absorption coefficient of 8000 cm-1 with an applied voltage of 15 V is obtained.

Original languageEnglish (US)
Pages (from-to)1383-1385
Number of pages3
JournalIEEE Photonics Technology Letters
Volume5
Issue number12
DOIs
StatePublished - Dec 1993
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Quantum-Confined Stark Effect Modulators at 1.06 μm on GaAs'. Together they form a unique fingerprint.

  • Cite this