Photoelectron attenuation lengths and thermal broadening in GaAs(110)

M. C. Schabel; I. M. Vitomirov; G. D. Waddill; J. H. Weaver

doi:10.1016/0368-2048(91)85004-D

Photoelectron attenuation lengths and thermal broadening in GaAs(110)

M. C. Schabel, I. M. Vitomirov, G. D. Waddill, J. H. Weaver

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

High resolution photoemission spectra from cleaved GaAs(110) have been used to determine the attenuation length as a function of photoelectron kinetic energy in the solid. The data are well described by an empirical functional form with a minimum escape depth of 4.77 Å at an energy of 32 eV. These results are compared with those from studies of InSb(110) and GaP(110). In addition, constant resolution photoemission has been used to evaluate thermal broadening of core-level line shapes from 50-300 K over a range of photon energies from 40-190 eV. This effect is relevant in high resolution studies of temperature dependent chemistry on metal-semiconductor interfaces and heterojunctions.

Original language	English (US)
Pages (from-to)	211-216
Number of pages	6
Journal	Journal of Electron Spectroscopy and Related Phenomena
Volume	56
Issue number	3
DOIs	https://doi.org/10.1016/0368-2048(91)85004-D
State	Published - Jun 1991
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Radiation
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Spectroscopy
Physical and Theoretical Chemistry

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10.1016/0368-2048(91)85004-D

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@article{03dc053e9d2444908c4053b286570f4e,

title = "Photoelectron attenuation lengths and thermal broadening in GaAs(110)",

abstract = "High resolution photoemission spectra from cleaved GaAs(110) have been used to determine the attenuation length as a function of photoelectron kinetic energy in the solid. The data are well described by an empirical functional form with a minimum escape depth of 4.77 {\AA} at an energy of 32 eV. These results are compared with those from studies of InSb(110) and GaP(110). In addition, constant resolution photoemission has been used to evaluate thermal broadening of core-level line shapes from 50-300 K over a range of photon energies from 40-190 eV. This effect is relevant in high resolution studies of temperature dependent chemistry on metal-semiconductor interfaces and heterojunctions.",

author = "Schabel, {M. C.} and Vitomirov, {I. M.} and Waddill, {G. D.} and Weaver, {J. H.}",

note = "Funding Information: This project was supported in part by Exxon under its Undergraduate Summer Research Grant program and by the NSF Research Experiences for Undergraduates program through DMR-86-10837. Discussions with C.M. Aldao and B.M. Trafas are gratefully acknowledged. The experiments were done at the NSF-supported Aladdin storage ring at the University of Wisconsin.",

year = "1991",

month = jun,

doi = "10.1016/0368-2048(91)85004-D",

language = "English (US)",

volume = "56",

pages = "211--216",

journal = "Journal of Electron Spectroscopy and Related Phenomena",

issn = "0368-2048",

publisher = "Elsevier",

number = "3",

}

TY - JOUR

T1 - Photoelectron attenuation lengths and thermal broadening in GaAs(110)

AU - Schabel, M. C.

AU - Vitomirov, I. M.

AU - Waddill, G. D.

AU - Weaver, J. H.

N1 - Funding Information: This project was supported in part by Exxon under its Undergraduate Summer Research Grant program and by the NSF Research Experiences for Undergraduates program through DMR-86-10837. Discussions with C.M. Aldao and B.M. Trafas are gratefully acknowledged. The experiments were done at the NSF-supported Aladdin storage ring at the University of Wisconsin.

PY - 1991/6

Y1 - 1991/6

N2 - High resolution photoemission spectra from cleaved GaAs(110) have been used to determine the attenuation length as a function of photoelectron kinetic energy in the solid. The data are well described by an empirical functional form with a minimum escape depth of 4.77 Å at an energy of 32 eV. These results are compared with those from studies of InSb(110) and GaP(110). In addition, constant resolution photoemission has been used to evaluate thermal broadening of core-level line shapes from 50-300 K over a range of photon energies from 40-190 eV. This effect is relevant in high resolution studies of temperature dependent chemistry on metal-semiconductor interfaces and heterojunctions.

AB - High resolution photoemission spectra from cleaved GaAs(110) have been used to determine the attenuation length as a function of photoelectron kinetic energy in the solid. The data are well described by an empirical functional form with a minimum escape depth of 4.77 Å at an energy of 32 eV. These results are compared with those from studies of InSb(110) and GaP(110). In addition, constant resolution photoemission has been used to evaluate thermal broadening of core-level line shapes from 50-300 K over a range of photon energies from 40-190 eV. This effect is relevant in high resolution studies of temperature dependent chemistry on metal-semiconductor interfaces and heterojunctions.

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VL - 56

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JO - Journal of Electron Spectroscopy and Related Phenomena

JF - Journal of Electron Spectroscopy and Related Phenomena

IS - 3

ER -

Photoelectron attenuation lengths and thermal broadening in GaAs(110)

Abstract

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