Photoelectron attenuation lengths and thermal broadening in GaAs(110)

M. C. Schabel, I. M. Vitomirov, G. D. Waddill, J. H. Weaver

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

High resolution photoemission spectra from cleaved GaAs(110) have been used to determine the attenuation length as a function of photoelectron kinetic energy in the solid. The data are well described by an empirical functional form with a minimum escape depth of 4.77 Å at an energy of 32 eV. These results are compared with those from studies of InSb(110) and GaP(110). In addition, constant resolution photoemission has been used to evaluate thermal broadening of core-level line shapes from 50-300 K over a range of photon energies from 40-190 eV. This effect is relevant in high resolution studies of temperature dependent chemistry on metal-semiconductor interfaces and heterojunctions.

Original languageEnglish (US)
Pages (from-to)211-216
Number of pages6
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume56
Issue number3
DOIs
StatePublished - Jun 1991

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry

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