Photoelectron attenuation lengths and thermal broadening in GaAs(110)

Matthias Schabel, I. M. Vitomirov, G. D. Waddill, J. H. Weaver

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

High resolution photoemission spectra from cleaved GaAs(110) have been used to determine the attenuation length as a function of photoelectron kinetic energy in the solid. The data are well described by an empirical functional form with a minimum escape depth of 4.77 Å at an energy of 32 eV. These results are compared with those from studies of InSb(110) and GaP(110). In addition, constant resolution photoemission has been used to evaluate thermal broadening of core-level line shapes from 50-300 K over a range of photon energies from 40-190 eV. This effect is relevant in high resolution studies of temperature dependent chemistry on metal-semiconductor interfaces and heterojunctions.

Original languageEnglish (US)
Pages (from-to)211-216
Number of pages6
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume56
Issue number3
DOIs
StatePublished - 1991
Externally publishedYes

Fingerprint

Photoemission
Photoelectrons
photoelectrons
photoelectric emission
attenuation
Core levels
high resolution
Kinetic energy
escape
line shape
Heterojunctions
heterojunctions
Photons
kinetic energy
Metals
chemistry
Semiconductor materials
energy
photons
metals

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics
  • Surfaces and Interfaces

Cite this

Photoelectron attenuation lengths and thermal broadening in GaAs(110). / Schabel, Matthias; Vitomirov, I. M.; Waddill, G. D.; Weaver, J. H.

In: Journal of Electron Spectroscopy and Related Phenomena, Vol. 56, No. 3, 1991, p. 211-216.

Research output: Contribution to journalArticle

Schabel, Matthias ; Vitomirov, I. M. ; Waddill, G. D. ; Weaver, J. H. / Photoelectron attenuation lengths and thermal broadening in GaAs(110). In: Journal of Electron Spectroscopy and Related Phenomena. 1991 ; Vol. 56, No. 3. pp. 211-216.
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