Abstract
We report on the phase transformation behavior of Pb0.91La0.09Zr0.65Ti0.35O3 (9/65/35) PLZT films grown on r-sapphire substrates via rf-magnetron sputtering. A complex microstructure results in these films depending on deposition and annealing conditions. A random equiaxed polycrystalline grain morphology was observed after rapid thermal annealing or furnace annealing when the as-deposited films were predominantly pyrochlore. Precipitate formation (100-150nm) was observed in PLZT films that were deposited at temperatures in excess of 490°C with a perovskite structure, after furnace annealing at 700°C. We believe that this is related to internal stresses in the films due to both the lattice mismatch and the thermal expansion mismatch between the PLZT film and the sapphire substrate.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 199-206 |
| Number of pages | 8 |
| Journal | Materials Science in Semiconductor Processing |
| Volume | 5 |
| Issue number | 2-3 |
| DOIs | |
| State | Published - Apr 2002 |
| Externally published | Yes |
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Keywords
- Ferroelectrics
- Magnetron sputtering
- PLZT
- Precipitate splitting
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Phase transformation and paired-plate precipitate formation in Pb0.91La0.09Zr0.65Ti0.35O3 films grown on sapphire substrates. / Tunaboylu, B.; Ozkan, C. S.; Ata, A.; Ring, K.; Esener, Sadik.
In: Materials Science in Semiconductor Processing, Vol. 5, No. 2-3, 04.2002, p. 199-206.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Phase transformation and paired-plate precipitate formation in Pb0.91La0.09Zr0.65Ti0.35O3 films grown on sapphire substrates
AU - Tunaboylu, B.
AU - Ozkan, C. S.
AU - Ata, A.
AU - Ring, K.
AU - Esener, Sadik
PY - 2002/4
Y1 - 2002/4
N2 - We report on the phase transformation behavior of Pb0.91La0.09Zr0.65Ti0.35O3 (9/65/35) PLZT films grown on r-sapphire substrates via rf-magnetron sputtering. A complex microstructure results in these films depending on deposition and annealing conditions. A random equiaxed polycrystalline grain morphology was observed after rapid thermal annealing or furnace annealing when the as-deposited films were predominantly pyrochlore. Precipitate formation (100-150nm) was observed in PLZT films that were deposited at temperatures in excess of 490°C with a perovskite structure, after furnace annealing at 700°C. We believe that this is related to internal stresses in the films due to both the lattice mismatch and the thermal expansion mismatch between the PLZT film and the sapphire substrate.
AB - We report on the phase transformation behavior of Pb0.91La0.09Zr0.65Ti0.35O3 (9/65/35) PLZT films grown on r-sapphire substrates via rf-magnetron sputtering. A complex microstructure results in these films depending on deposition and annealing conditions. A random equiaxed polycrystalline grain morphology was observed after rapid thermal annealing or furnace annealing when the as-deposited films were predominantly pyrochlore. Precipitate formation (100-150nm) was observed in PLZT films that were deposited at temperatures in excess of 490°C with a perovskite structure, after furnace annealing at 700°C. We believe that this is related to internal stresses in the films due to both the lattice mismatch and the thermal expansion mismatch between the PLZT film and the sapphire substrate.
KW - Ferroelectrics
KW - Magnetron sputtering
KW - PLZT
KW - Precipitate splitting
UR - http://www.scopus.com/inward/record.url?scp=0036557764&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036557764&partnerID=8YFLogxK
U2 - 10.1016/S1369-8001(02)00073-2
DO - 10.1016/S1369-8001(02)00073-2
M3 - Article
AN - SCOPUS:0036557764
VL - 5
SP - 199
EP - 206
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
SN - 1369-8001
IS - 2-3
ER -