Phase transformation and paired-plate precipitate formation in Pb0.91La0.09Zr0.65Ti0.35O3  films grown on sapphire substrates

B. Tunaboylu; C. S. Ozkan; A. Ata; K. Ring; S. Esener

doi:10.1016/S1369-8001(02)00073-2

Phase transformation and paired-plate precipitate formation in Pb_0.91La_0.09Zr_0.65Ti_0.35O₃ films grown on sapphire substrates

B. Tunaboylu, C. S. Ozkan, A. Ata, K. Ring, S. Esener

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We report on the phase transformation behavior of Pb_0.91La_0.09Zr_0.65Ti_0.35O₃ (9/65/35) PLZT films grown on r-sapphire substrates via rf-magnetron sputtering. A complex microstructure results in these films depending on deposition and annealing conditions. A random equiaxed polycrystalline grain morphology was observed after rapid thermal annealing or furnace annealing when the as-deposited films were predominantly pyrochlore. Precipitate formation (100-150nm) was observed in PLZT films that were deposited at temperatures in excess of 490°C with a perovskite structure, after furnace annealing at 700°C. We believe that this is related to internal stresses in the films due to both the lattice mismatch and the thermal expansion mismatch between the PLZT film and the sapphire substrate.

Original language	English (US)
Pages (from-to)	199-206
Number of pages	8
Journal	Materials Science in Semiconductor Processing
Volume	5
Issue number	2-3
DOIs	https://doi.org/10.1016/S1369-8001(02)00073-2
State	Published - Apr 2002
Externally published	Yes

Keywords

Ferroelectrics
Magnetron sputtering
PLZT
Precipitate splitting

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/S1369-8001(02)00073-2

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@article{48a0d192652b4794a2c275ee7f0b0188,

title = "Phase transformation and paired-plate precipitate formation in Pb0.91La0.09Zr0.65Ti0.35O3 films grown on sapphire substrates",

abstract = "We report on the phase transformation behavior of Pb0.91La0.09Zr0.65Ti0.35O3 (9/65/35) PLZT films grown on r-sapphire substrates via rf-magnetron sputtering. A complex microstructure results in these films depending on deposition and annealing conditions. A random equiaxed polycrystalline grain morphology was observed after rapid thermal annealing or furnace annealing when the as-deposited films were predominantly pyrochlore. Precipitate formation (100-150nm) was observed in PLZT films that were deposited at temperatures in excess of 490°C with a perovskite structure, after furnace annealing at 700°C. We believe that this is related to internal stresses in the films due to both the lattice mismatch and the thermal expansion mismatch between the PLZT film and the sapphire substrate.",

keywords = "Ferroelectrics, Magnetron sputtering, PLZT, Precipitate splitting",

author = "B. Tunaboylu and Ozkan, {C. S.} and A. Ata and K. Ring and S. Esener",

note = "Funding Information: This work was supported by TRW subcontract GZ30602W35 Ultra Program under DARPA prime contract DAAH 04-93-G-00029. Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.",

year = "2002",

month = apr,

doi = "10.1016/S1369-8001(02)00073-2",

language = "English (US)",

volume = "5",

pages = "199--206",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Limited",

number = "2-3",

}

TY - JOUR

T1 - Phase transformation and paired-plate precipitate formation in Pb0.91La0.09Zr0.65Ti0.35O3 films grown on sapphire substrates

AU - Tunaboylu, B.

AU - Ozkan, C. S.

AU - Ata, A.

AU - Ring, K.

AU - Esener, S.

N1 - Funding Information: This work was supported by TRW subcontract GZ30602W35 Ultra Program under DARPA prime contract DAAH 04-93-G-00029. Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.

PY - 2002/4

Y1 - 2002/4

N2 - We report on the phase transformation behavior of Pb0.91La0.09Zr0.65Ti0.35O3 (9/65/35) PLZT films grown on r-sapphire substrates via rf-magnetron sputtering. A complex microstructure results in these films depending on deposition and annealing conditions. A random equiaxed polycrystalline grain morphology was observed after rapid thermal annealing or furnace annealing when the as-deposited films were predominantly pyrochlore. Precipitate formation (100-150nm) was observed in PLZT films that were deposited at temperatures in excess of 490°C with a perovskite structure, after furnace annealing at 700°C. We believe that this is related to internal stresses in the films due to both the lattice mismatch and the thermal expansion mismatch between the PLZT film and the sapphire substrate.

AB - We report on the phase transformation behavior of Pb0.91La0.09Zr0.65Ti0.35O3 (9/65/35) PLZT films grown on r-sapphire substrates via rf-magnetron sputtering. A complex microstructure results in these films depending on deposition and annealing conditions. A random equiaxed polycrystalline grain morphology was observed after rapid thermal annealing or furnace annealing when the as-deposited films were predominantly pyrochlore. Precipitate formation (100-150nm) was observed in PLZT films that were deposited at temperatures in excess of 490°C with a perovskite structure, after furnace annealing at 700°C. We believe that this is related to internal stresses in the films due to both the lattice mismatch and the thermal expansion mismatch between the PLZT film and the sapphire substrate.

KW - Ferroelectrics

KW - Magnetron sputtering

KW - PLZT

KW - Precipitate splitting

UR - http://www.scopus.com/inward/record.url?scp=0036557764&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036557764&partnerID=8YFLogxK

U2 - 10.1016/S1369-8001(02)00073-2

DO - 10.1016/S1369-8001(02)00073-2

M3 - Article

AN - SCOPUS:0036557764

VL - 5

SP - 199

EP - 206

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

IS - 2-3

ER -