n-p-n Silicon Lateral Phototransistors for Hybrid Integrated Optical Circuits

Sun Yuan Huang, Sadik Esener, Sing H. Lee

Research output: Contribution to journalArticle

Abstract

An etched mesa silicon lateral phototransistor (EMS-LPT) suitable for detecting the light signal from optical channel waveguides has been designed and fabricated. In this paper both n+-p-n+ uniform base and n+-p-p~-n+ double-diffused EMS-LPT's are reported. The photoactive region of the EMS-LPT is highly localized and can be easily coupled either via an evanescent field or to a grating coupler on a channel waveguide. Light coupling, gain, speed, and signal-to-noise ratio of the device are thereby greatly improved. The fabrication techniques of the EMS-LPT's are compatible with those of MOSFET's, permitting integration of multiple EMS-LPT's and MOSFET load transistors to form optically addressed inverters on the same silicon chip. By flip-chip bonding LiNb03 and silicon substrates and coupling LiNb03 channel waveguides to EMS-LPT's via grating couplers, we produce electrooptic switches with optical input and output.

Original languageEnglish (US)
Pages (from-to)433-441
Number of pages9
JournalIEEE Transactions on Electron Devices
Volume33
Issue number4
DOIs
StatePublished - Apr 1986

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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