n-p-n Silicon Lateral Phototransistors for Hybrid Integrated Optical Circuits

Sun Yuan Huang, Sadik Esener, Sing H. Lee

Research output: Contribution to journalArticle

Abstract

An etched mesa silicon lateral phototransistor (EMS-LPT) suitable for detecting the light signal from optical channel waveguides has been designed and fabricated. In this paper both n+-p-n+ uniform base and n+-p-p~-n+ double-diffused EMS-LPT's are reported. The photoactive region of the EMS-LPT is highly localized and can be easily coupled either via an evanescent field or to a grating coupler on a channel waveguide. Light coupling, gain, speed, and signal-to-noise ratio of the device are thereby greatly improved. The fabrication techniques of the EMS-LPT's are compatible with those of MOSFET's, permitting integration of multiple EMS-LPT's and MOSFET load transistors to form optically addressed inverters on the same silicon chip. By flip-chip bonding LiNb03 and silicon substrates and coupling LiNb03 channel waveguides to EMS-LPT's via grating couplers, we produce electrooptic switches with optical input and output.

Original languageEnglish (US)
Pages (from-to)433-441
Number of pages9
JournalIEEE Transactions on Electron Devices
Volume33
Issue number4
DOIs
StatePublished - 1986
Externally publishedYes

Fingerprint

Phototransistors
phototransistors
Silicon
Waveguides
Networks (circuits)
mesas
silicon
waveguides
couplers
field effect transistors
chips
gratings
Evanescent fields
inverters
Electrooptical effects
electro-optics
Signal to noise ratio
Transistors
signal to noise ratios
transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

Cite this

n-p-n Silicon Lateral Phototransistors for Hybrid Integrated Optical Circuits. / Huang, Sun Yuan; Esener, Sadik; Lee, Sing H.

In: IEEE Transactions on Electron Devices, Vol. 33, No. 4, 1986, p. 433-441.

Research output: Contribution to journalArticle

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