Monolithic integration of InAlGaAs/InGaAs FETs with MQW modulators operating at 1.06 μm on GaAs substrates

D. W. Shih, C. Fan, M. W. Hansen, H. H. Wieder, S. C. Esener

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

The paper describes the design of InAlGaAs/InGaAs FETs with MQW modulators. The device structures are design based on the operating wavelength of the modulator which is 1.06 μm on GaAs substrates.

Original languageEnglish (US)
Pages (from-to)33-34
Number of pages2
JournalLEOS Summer Topical Meeting
StatePublished - Dec 1 1994
Externally publishedYes
EventProceedings of the LEOS 1994 Summer Topical Meeting - Lake Tahoe, NV, USA
Duration: Jul 6 1994Jul 8 1994

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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