The paper describes the design of InAlGaAs/InGaAs FETs with MQW modulators. The device structures are design based on the operating wavelength of the modulator which is 1.06 μm on GaAs substrates.
|Original language||English (US)|
|Number of pages||2|
|State||Published - 1994|
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics