Monolithic integration of InAlGaAs/InGaAs FETs with MQW modulators operating at 1.06 μm on GaAs substrates

D. W. Shih; C. Fan; M. W. Hansen; H. H. Wieder; S. C. Esener

Monolithic integration of InAlGaAs/InGaAs FETs with MQW modulators operating at 1.06 μm on GaAs substrates

D. W. Shih, C. Fan, M. W. Hansen, H. H. Wieder, S. C. Esener

Research output: Contribution to journal › Conference article › peer-review

Abstract

The paper describes the design of InAlGaAs/InGaAs FETs with MQW modulators. The device structures are design based on the operating wavelength of the modulator which is 1.06 μm on GaAs substrates.

Original language	English (US)
Pages (from-to)	33-34
Number of pages	2
Journal	LEOS Summer Topical Meeting
State	Published - Dec 1 1994
Externally published	Yes
Event	Proceedings of the LEOS 1994 Summer Topical Meeting - Lake Tahoe, NV, USA Duration: Jul 6 1994 → Jul 8 1994

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Cite this

@article{d5086b08dad045c5b5e02fbd7c081073,

title = "Monolithic integration of InAlGaAs/InGaAs FETs with MQW modulators operating at 1.06 μm on GaAs substrates",

abstract = "The paper describes the design of InAlGaAs/InGaAs FETs with MQW modulators. The device structures are design based on the operating wavelength of the modulator which is 1.06 μm on GaAs substrates.",

author = "Shih, {D. W.} and C. Fan and Hansen, {M. W.} and Wieder, {H. H.} and Esener, {S. C.}",

year = "1994",

month = dec,

day = "1",

language = "English (US)",

pages = "33--34",

journal = "LEOS Summer Topical Meeting",

issn = "1099-4742",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the LEOS 1994 Summer Topical Meeting ; Conference date: 06-07-1994 Through 08-07-1994",

}

TY - JOUR

T1 - Monolithic integration of InAlGaAs/InGaAs FETs with MQW modulators operating at 1.06 μm on GaAs substrates

AU - Shih, D. W.

AU - Fan, C.

AU - Hansen, M. W.

AU - Wieder, H. H.

AU - Esener, S. C.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - The paper describes the design of InAlGaAs/InGaAs FETs with MQW modulators. The device structures are design based on the operating wavelength of the modulator which is 1.06 μm on GaAs substrates.

AB - The paper describes the design of InAlGaAs/InGaAs FETs with MQW modulators. The device structures are design based on the operating wavelength of the modulator which is 1.06 μm on GaAs substrates.

UR - http://www.scopus.com/inward/record.url?scp=0028585710&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028585710&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0028585710

SN - 1099-4742

SP - 33

EP - 34

JO - LEOS Summer Topical Meeting

JF - LEOS Summer Topical Meeting

T2 - Proceedings of the LEOS 1994 Summer Topical Meeting

Y2 - 6 July 1994 through 8 July 1994

ER -

Monolithic integration of InAlGaAs/InGaAs FETs with MQW modulators operating at 1.06 μm on GaAs substrates

Abstract

ASJC Scopus subject areas

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