Monolithic integration of InAlGaAs/InGaAs FETs with MQW modulators operating at 1.06 μm on GaAs substrates

D. W. Shih, C. Fan, M. W. Hansen, H. H. Wieder, Sadik Esener

Research output: Contribution to journalArticle

1 Scopus citations


The paper describes the design of InAlGaAs/InGaAs FETs with MQW modulators. The device structures are design based on the operating wavelength of the modulator which is 1.06 μm on GaAs substrates.

Original languageEnglish (US)
Pages (from-to)33-34
Number of pages2
JournalUnknown Journal
StatePublished - 1994
Externally publishedYes


ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

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