Integration of InAlGaAs/InGaAs MODFETs on MQW modulators on GaAs substrates

D. W. Shih, C. Fan, M. W. Hansen, Sadik Esener, H. H. Wieder

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

An In xAl yGa 1-x-yAs device layer structure that enables the monolithic integration of In 0.25Al 0.75As/In 0.15Ga 0.85As MODFETs and In 0.25Al 0.35Ga 0.40As/In 0.25Ga 0.75As MQW modulators is reported. Current gain cutoff frequencies of 10 GHz are measured for 1 μm gate length MODFETs. MQW modulators operating at 1.05 μm demonstrate 20% transmission modulation for an applied 8 V.

Original languageEnglish (US)
Pages (from-to)1713-1714
Number of pages2
JournalElectronics Letters
Volume30
Issue number20
DOIs
StatePublished - Jan 1 1994
Externally publishedYes

Fingerprint

High electron mobility transistors
Modulators
Cutoff frequency
Substrates
Modulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Integration of InAlGaAs/InGaAs MODFETs on MQW modulators on GaAs substrates. / Shih, D. W.; Fan, C.; Hansen, M. W.; Esener, Sadik; Wieder, H. H.

In: Electronics Letters, Vol. 30, No. 20, 01.01.1994, p. 1713-1714.

Research output: Contribution to journalArticle

Shih, D. W. ; Fan, C. ; Hansen, M. W. ; Esener, Sadik ; Wieder, H. H. / Integration of InAlGaAs/InGaAs MODFETs on MQW modulators on GaAs substrates. In: Electronics Letters. 1994 ; Vol. 30, No. 20. pp. 1713-1714.
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