Integration of InAIGaAs/InGaAs MODFETs on MQW modulators on GaAs substrates

D. W. Shih; C. Fan; M. W. Hansen; S. C. Esener; H. H. Wieder

doi:10.1049/el:19941128

Integration of InAIGaAs/InGaAs MODFETs on MQW modulators on GaAs substrates

D. W. Shih, C. Fan, M. W. Hansen, S. C. Esener, H. H. Wieder

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

An In_xAl_yGa_l-x-yAs device layer structure that enables the monolithic integration of In_0.25Al_0.75As/In_0.15Ga_0.85As MODFETs and In_0.25Al_0.35Ga_0.40As/ln_0.75Ga_0.75As MQW modulators is reported. Current gain cutoff frequencies of 10GHz are measured for 1µm gate length MODFETs. MQW modulators operating at 1.05µm demonstrate 20% transmission modulation for an applied 8V.

Original language	English (US)
Pages (from-to)	1713-1714
Number of pages	2
Journal	Electronics Letters
Volume	30
Issue number	20
DOIs	https://doi.org/10.1049/el:19941128
State	Published - 1994
Externally published	Yes

Keywords

Integrated optoelectronics
MODFETs
Optical modulation
Semiconductor quantum wells

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19941128

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@article{83126b7c88d64494b420752170ea8010,

title = "Integration of InAIGaAs/InGaAs MODFETs on MQW modulators on GaAs substrates",

abstract = "An InxAlyGal-x-yAs device layer structure that enables the monolithic integration of In0.25Al0.75As/In0.15Ga0.85As MODFETs and In0.25Al0.35Ga0.40As/ln0.75Ga0.75As MQW modulators is reported. Current gain cutoff frequencies of 10GHz are measured for 1µm gate length MODFETs. MQW modulators operating at 1.05µm demonstrate 20% transmission modulation for an applied 8V.",

keywords = "Integrated optoelectronics, MODFETs, Optical modulation, Semiconductor quantum wells",

author = "Shih, {D. W.} and C. Fan and Hansen, {M. W.} and Esener, {S. C.} and Wieder, {H. H.}",

year = "1994",

doi = "10.1049/el:19941128",

language = "English (US)",

volume = "30",

pages = "1713--1714",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

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TY - JOUR

T1 - Integration of InAIGaAs/InGaAs MODFETs on MQW modulators on GaAs substrates

AU - Shih, D. W.

AU - Fan, C.

AU - Hansen, M. W.

AU - Esener, S. C.

AU - Wieder, H. H.

PY - 1994

Y1 - 1994

N2 - An InxAlyGal-x-yAs device layer structure that enables the monolithic integration of In0.25Al0.75As/In0.15Ga0.85As MODFETs and In0.25Al0.35Ga0.40As/ln0.75Ga0.75As MQW modulators is reported. Current gain cutoff frequencies of 10GHz are measured for 1µm gate length MODFETs. MQW modulators operating at 1.05µm demonstrate 20% transmission modulation for an applied 8V.

AB - An InxAlyGal-x-yAs device layer structure that enables the monolithic integration of In0.25Al0.75As/In0.15Ga0.85As MODFETs and In0.25Al0.35Ga0.40As/ln0.75Ga0.75As MQW modulators is reported. Current gain cutoff frequencies of 10GHz are measured for 1µm gate length MODFETs. MQW modulators operating at 1.05µm demonstrate 20% transmission modulation for an applied 8V.

KW - Integrated optoelectronics

KW - MODFETs

KW - Optical modulation

KW - Semiconductor quantum wells

UR - http://www.scopus.com/inward/record.url?scp=0028515244&partnerID=8YFLogxK

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DO - 10.1049/el:19941128

M3 - Article

AN - SCOPUS:0028515244

SN - 0013-5194

VL - 30

SP - 1713

EP - 1714

JO - Electronics Letters

JF - Electronics Letters

IS - 20

ER -

Integration of InAIGaAs/InGaAs MODFETs on MQW modulators on GaAs substrates

Abstract

Keywords

ASJC Scopus subject areas

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