An InxAlyGal-x-yAs device layer structure that enables the monolithic integration of In0.25Al0.75As/In0.15Ga0.85As MODFETs and In0.25Al0.35Ga0.40As/ln0.75Ga0.75As MQW modulators is reported. Current gain cutoff frequencies of 10GHz are measured for 1µm gate length MODFETs. MQW modulators operating at 1.05µm demonstrate 20% transmission modulation for an applied 8V.
- Integrated optoelectronics
- Optical modulation
- Semiconductor quantum wells
ASJC Scopus subject areas
- Electrical and Electronic Engineering