Integration of InAIGaAs/InGaAs MODFETs on MQW modulators on GaAs substrates

D. W. Shih, C. Fan, M. W. Hansen, S. C. Esener, H. H. Wieder

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

An InxAlyGal-x-yAs device layer structure that enables the monolithic integration of In0.25Al0.75As/In0.15Ga0.85As MODFETs and In0.25Al0.35Ga0.40As/ln0.75Ga0.75As MQW modulators is reported. Current gain cutoff frequencies of 10GHz are measured for 1µm gate length MODFETs. MQW modulators operating at 1.05µm demonstrate 20% transmission modulation for an applied 8V.

Original languageEnglish (US)
Pages (from-to)1713-1714
Number of pages2
JournalElectronics Letters
Volume30
Issue number20
DOIs
StatePublished - Jan 1 1994

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Keywords

  • Integrated optoelectronics
  • MODFETs
  • Optical modulation
  • Semiconductor quantum wells

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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