High-performance AlGaAs/GaAs HBT IC technology

S. J. Prasad; B. Vetanen; C. Haynes; S. Park; I. Beers; Scott Diamond; G. A. Pubanz; John T. Ebner; S. Sanielevici; A. Agoston

High-performance AlGaAs/GaAs HBT IC technology

S. J. Prasad, B. Vetanen, C. Haynes, S. Park, I. Beers, Scott Diamond, G. A. Pubanz, John T. Ebner, S. Sanielevici, A. Agoston

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A high-performance AlGaAs/GaAs HBTIC technology capable of 45 GHz f_T and f_max is described. The process is mesa isolated and does not use any ion-implantation steps. This simple non-self-aligned process integrates 1.4 THz Schottky diodes, nichrome resistors, MIM capacitors and air-bridge inductors. An HBT divide-by-eight prescaler circuit clocks at 13.5 GHz. A pulser circuit using the fast Schottky diodes produced a voltage pulse having 10.35 ps rise time.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	Publ by Int Soc for Optical Engineering
Pages	12-26
Number of pages	15
ISBN (Print)	0819408417
State	Published - 1992
Externally published	Yes
Event	High-Speed Electronics and Optoelectronics - Somerset, NJ, USA Duration: Mar 26 1992 → Mar 26 1992

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1680
ISSN (Print)	0277-786X

Conference

Conference	High-Speed Electronics and Optoelectronics
City	Somerset, NJ, USA
Period	3/26/92 → 3/26/92

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Cite this

Prasad, S. J., Vetanen, B., Haynes, C., Park, S., Beers, I., Diamond, S., Pubanz, G. A., Ebner, J. T., Sanielevici, S., & Agoston, A. (1992). High-performance AlGaAs/GaAs HBT IC technology. In Proceedings of SPIE - The International Society for Optical Engineering (pp. 12-26). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1680). Publ by Int Soc for Optical Engineering.

High-performance AlGaAs/GaAs HBT IC technology. / Prasad, S. J.; Vetanen, B.; Haynes, C. et al.

Proceedings of SPIE - The International Society for Optical Engineering. Publ by Int Soc for Optical Engineering, 1992. p. 12-26 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1680).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Prasad, SJ, Vetanen, B, Haynes, C, Park, S, Beers, I, Diamond, S, Pubanz, GA, Ebner, JT, Sanielevici, S & Agoston, A 1992, High-performance AlGaAs/GaAs HBT IC technology. in Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, vol. 1680, Publ by Int Soc for Optical Engineering, pp. 12-26, High-Speed Electronics and Optoelectronics, Somerset, NJ, USA, 3/26/92.

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abstract = "A high-performance AlGaAs/GaAs HBTIC technology capable of 45 GHz fT and f max is described. The process is mesa isolated and does not use any ion-implantation steps. This simple non-self-aligned process integrates 1.4 THz Schottky diodes, nichrome resistors, MIM capacitors and air-bridge inductors. An HBT divide-by-eight prescaler circuit clocks at 13.5 GHz. A pulser circuit using the fast Schottky diodes produced a voltage pulse having 10.35 ps rise time.",

author = "Prasad, {S. J.} and B. Vetanen and C. Haynes and S. Park and I. Beers and Scott Diamond and Pubanz, {G. A.} and Ebner, {John T.} and S. Sanielevici and A. Agoston",

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AU - Prasad, S. J.

AU - Vetanen, B.

AU - Haynes, C.

AU - Park, S.

AU - Beers, I.

AU - Diamond, Scott

AU - Pubanz, G. A.

AU - Ebner, John T.

AU - Sanielevici, S.

AU - Agoston, A.

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N2 - A high-performance AlGaAs/GaAs HBTIC technology capable of 45 GHz fT and f max is described. The process is mesa isolated and does not use any ion-implantation steps. This simple non-self-aligned process integrates 1.4 THz Schottky diodes, nichrome resistors, MIM capacitors and air-bridge inductors. An HBT divide-by-eight prescaler circuit clocks at 13.5 GHz. A pulser circuit using the fast Schottky diodes produced a voltage pulse having 10.35 ps rise time.

AB - A high-performance AlGaAs/GaAs HBTIC technology capable of 45 GHz fT and f max is described. The process is mesa isolated and does not use any ion-implantation steps. This simple non-self-aligned process integrates 1.4 THz Schottky diodes, nichrome resistors, MIM capacitors and air-bridge inductors. An HBT divide-by-eight prescaler circuit clocks at 13.5 GHz. A pulser circuit using the fast Schottky diodes produced a voltage pulse having 10.35 ps rise time.

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T3 - Proceedings of SPIE - The International Society for Optical Engineering

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ER -

High-performance AlGaAs/GaAs HBT IC technology

Abstract

Publication series

Conference

ASJC Scopus subject areas

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