High-performance AlGaAs/GaAs HBT IC technology

S. J. Prasad, B. Vetanen, C. Haynes, S. Park, I. Beers, Scott Diamond, G. A. Pubanz, John T. Ebner, S. Sanielevici, A. Agoston

Research output: Chapter in Book/Report/Conference proceedingConference contribution


A high-performance AlGaAs/GaAs HBTIC technology capable of 45 GHz fT and f max is described. The process is mesa isolated and does not use any ion-implantation steps. This simple non-self-aligned process integrates 1.4 THz Schottky diodes, nichrome resistors, MIM capacitors and air-bridge inductors. An HBT divide-by-eight prescaler circuit clocks at 13.5 GHz. A pulser circuit using the fast Schottky diodes produced a voltage pulse having 10.35 ps rise time.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherPubl by Int Soc for Optical Engineering
Number of pages15
ISBN (Print)0819408417
StatePublished - 1992
Externally publishedYes
EventHigh-Speed Electronics and Optoelectronics - Somerset, NJ, USA
Duration: Mar 26 1992Mar 26 1992

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


ConferenceHigh-Speed Electronics and Optoelectronics
CitySomerset, NJ, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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