Ferroelectric PLZT thin films deposited by RF triode magnetron sputtering for spatial light modulators

Bahadir Tunaboylu, Phillip C. Harvey, Fei Deng, Chi Fan, Sadik Esener

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Lead lanthanum zirconate titanate, PLZT (9/65/35) thin films were deposited on r-plane sapphire and Pt/Si by triode-magnetron sputtering at low temperature and transformed to the perovskite phase by rapid-thermal annealing. To form perovskite phase directly during deposition requires high substrate temperatures which generally cause lead and/or titanium deficiency. At relatively low deposition temperatures, the deposited films tend to consist of both pyrochlore and perovskite phases. A full transformation of pyrochlore to perovskite phase is difficult. With low temperature deposition and rapid-thermal annealing, perovskite PLZT (9/65/35) films with strong (110) orientation were obtained. Their optical and dielectric properties are reported.

Original languageEnglish (US)
Title of host publicationIEEE International Symposium on Applications of Ferroelectrics
EditorsB.M. Kulwicki, A. Amin, A. Safari
PublisherIEEE
Pages675-678
Number of pages4
Volume2
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) - East Brunswick, NJ, USA
Duration: Aug 18 1996Aug 21 1996

Other

OtherProceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)
CityEast Brunswick, NJ, USA
Period8/18/968/21/96

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ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

Cite this

Tunaboylu, B., Harvey, P. C., Deng, F., Fan, C., & Esener, S. (1996). Ferroelectric PLZT thin films deposited by RF triode magnetron sputtering for spatial light modulators. In B. M. Kulwicki, A. Amin, & A. Safari (Eds.), IEEE International Symposium on Applications of Ferroelectrics (Vol. 2, pp. 675-678). IEEE.