External electroluminescence measurements of InGaAsInAlAs avalanche photodiodes

Hod Finkelstein; Sanja Zlatanovic; Yu Hwa Lo; Sadik C. Esener; Kai Zhao

doi:10.1063/1.2824463

External electroluminescence measurements of InGaAsInAlAs avalanche photodiodes

Hod Finkelstein, Sanja Zlatanovic, Yu Hwa Lo, Sadik C. Esener, Kai Zhao

Research output: Contribution to journal › Article › peer-review

Abstract

The external efficiency of electroluminescence resulting from hot-carrier recombination has been studied in an InGaAsInAlAs avalanche photodiode. An analytical model that quantifies this emission is presented. Experimental data suggest that the emission originates from an intrinsic layer above the multiplication region. This electroluminescence mechanism offers a novel way for frequency upconversion, where the upconverted frequency can be controlled with proper choice of device layers. Lastly, we report for the first time the optical absorption properties of In0.52 Al0.48 As.

Original language	English (US)
Article number	243510
Journal	Applied Physics Letters
Volume	91
Issue number	24
DOIs	https://doi.org/10.1063/1.2824463
State	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2824463

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@article{ae26c9053ca448bc86361b2090ed7533,

title = "External electroluminescence measurements of InGaAsInAlAs avalanche photodiodes",

abstract = "The external efficiency of electroluminescence resulting from hot-carrier recombination has been studied in an InGaAsInAlAs avalanche photodiode. An analytical model that quantifies this emission is presented. Experimental data suggest that the emission originates from an intrinsic layer above the multiplication region. This electroluminescence mechanism offers a novel way for frequency upconversion, where the upconverted frequency can be controlled with proper choice of device layers. Lastly, we report for the first time the optical absorption properties of In0.52 Al0.48 As.",

author = "Hod Finkelstein and Sanja Zlatanovic and Lo, {Yu Hwa} and Esener, {Sadik C.} and Kai Zhao",

note = "Funding Information: This research was supported by DARPA and the Jet Propulsion Laboratory. The authors acknowledge the technical support of the staff in UCSD Nano3 Facility. We also thank Bill Farr at JPL, and Arthur Zhang and Sifang You at UCSD for insightful discussions.",

year = "2007",

doi = "10.1063/1.2824463",

language = "English (US)",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "24",

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TY - JOUR

T1 - External electroluminescence measurements of InGaAsInAlAs avalanche photodiodes

AU - Finkelstein, Hod

AU - Zlatanovic, Sanja

AU - Lo, Yu Hwa

AU - Esener, Sadik C.

AU - Zhao, Kai

N1 - Funding Information: This research was supported by DARPA and the Jet Propulsion Laboratory. The authors acknowledge the technical support of the staff in UCSD Nano3 Facility. We also thank Bill Farr at JPL, and Arthur Zhang and Sifang You at UCSD for insightful discussions.

PY - 2007

Y1 - 2007

N2 - The external efficiency of electroluminescence resulting from hot-carrier recombination has been studied in an InGaAsInAlAs avalanche photodiode. An analytical model that quantifies this emission is presented. Experimental data suggest that the emission originates from an intrinsic layer above the multiplication region. This electroluminescence mechanism offers a novel way for frequency upconversion, where the upconverted frequency can be controlled with proper choice of device layers. Lastly, we report for the first time the optical absorption properties of In0.52 Al0.48 As.

AB - The external efficiency of electroluminescence resulting from hot-carrier recombination has been studied in an InGaAsInAlAs avalanche photodiode. An analytical model that quantifies this emission is presented. Experimental data suggest that the emission originates from an intrinsic layer above the multiplication region. This electroluminescence mechanism offers a novel way for frequency upconversion, where the upconverted frequency can be controlled with proper choice of device layers. Lastly, we report for the first time the optical absorption properties of In0.52 Al0.48 As.

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DO - 10.1063/1.2824463

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 243510

ER -

External electroluminescence measurements of InGaAsInAlAs avalanche photodiodes

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