External electroluminescence measurements of InGaAsInAlAs avalanche photodiodes

Hod Finkelstein, Sanja Zlatanovic, Yu Hwa Lo, Sadik Esener, Kai Zhao

Research output: Contribution to journalArticle

Abstract

The external efficiency of electroluminescence resulting from hot-carrier recombination has been studied in an InGaAsInAlAs avalanche photodiode. An analytical model that quantifies this emission is presented. Experimental data suggest that the emission originates from an intrinsic layer above the multiplication region. This electroluminescence mechanism offers a novel way for frequency upconversion, where the upconverted frequency can be controlled with proper choice of device layers. Lastly, we report for the first time the optical absorption properties of In0.52 Al0.48 As.

Original languageEnglish (US)
Article number243510
JournalApplied Physics Letters
Volume91
Issue number24
DOIs
StatePublished - 2007
Externally publishedYes

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electroluminescence
avalanches
photodiodes
multiplication
optical absorption

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

External electroluminescence measurements of InGaAsInAlAs avalanche photodiodes. / Finkelstein, Hod; Zlatanovic, Sanja; Lo, Yu Hwa; Esener, Sadik; Zhao, Kai.

In: Applied Physics Letters, Vol. 91, No. 24, 243510, 2007.

Research output: Contribution to journalArticle

Finkelstein, Hod ; Zlatanovic, Sanja ; Lo, Yu Hwa ; Esener, Sadik ; Zhao, Kai. / External electroluminescence measurements of InGaAsInAlAs avalanche photodiodes. In: Applied Physics Letters. 2007 ; Vol. 91, No. 24.
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