Energies and symmetries in interface formation: Ln/GaP(110) and Ga/ InP(IIO)

I. W. Vitomirov, C. M. Aldao, Matthias Schabel, G. D. Waddiil, S. G. Anderson, J. H. Weaver

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We have used high-resolution synchrotron radiation photoemission to study adatom-substrate interactions and growth morphologies for In/GaP(110) and Ga/InP(110). Room-temperature experiments reveal extensive adatom clustering, but also substrate disruption and cation segregation for both interfaces, with greater amounts for Ga/InP(110). Ga deposition in InP(110) at 60 K also results in substrate disruption, but with kinetic trapping of the released In atoms close to the interface and a greater tendency toward layer-by-layer growth. In constrast, the deposition of preformed metallic Ga clusters shows no evidence for substrate disruption. We conclude that atom condensation and coalescence are responsible for disruption, with different activation barriers being present for cluster deposition and atom deposition because of the details of surface and interface bonding. For Ga deposition on ft-type InP(110) at 60 K, the appearance of states at the Fermi level is correlated to changes in band bending. Metal cluster deposition leads to pinning positions that can be related to surface unrelaxation around the perimeter of the clusters; we find no evidence for metal induced gap states or defect levels.

Original languageEnglish (US)
Pages (from-to)758-764
Number of pages7
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume7
Issue number3
DOIs
StatePublished - 1989
Externally publishedYes

Fingerprint

symmetry
Adatoms
Substrates
Atoms
adatoms
energy
Metals
atoms
Photoemission
metal clusters
Synchrotron radiation
Fermi level
Coalescence
coalescing
Cations
Condensation
synchrotron radiation
tendencies
photoelectric emission
condensation

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Energies and symmetries in interface formation : Ln/GaP(110) and Ga/ InP(IIO). / Vitomirov, I. W.; Aldao, C. M.; Schabel, Matthias; Waddiil, G. D.; Anderson, S. G.; Weaver, J. H.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 7, No. 3, 1989, p. 758-764.

Research output: Contribution to journalArticle

Vitomirov, I. W. ; Aldao, C. M. ; Schabel, Matthias ; Waddiil, G. D. ; Anderson, S. G. ; Weaver, J. H. / Energies and symmetries in interface formation : Ln/GaP(110) and Ga/ InP(IIO). In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1989 ; Vol. 7, No. 3. pp. 758-764.
@article{c9c6ac824ebf41878820b9d5ad6ee936,
title = "Energies and symmetries in interface formation: Ln/GaP(110) and Ga/ InP(IIO)",
abstract = "We have used high-resolution synchrotron radiation photoemission to study adatom-substrate interactions and growth morphologies for In/GaP(110) and Ga/InP(110). Room-temperature experiments reveal extensive adatom clustering, but also substrate disruption and cation segregation for both interfaces, with greater amounts for Ga/InP(110). Ga deposition in InP(110) at 60 K also results in substrate disruption, but with kinetic trapping of the released In atoms close to the interface and a greater tendency toward layer-by-layer growth. In constrast, the deposition of preformed metallic Ga clusters shows no evidence for substrate disruption. We conclude that atom condensation and coalescence are responsible for disruption, with different activation barriers being present for cluster deposition and atom deposition because of the details of surface and interface bonding. For Ga deposition on ft-type InP(110) at 60 K, the appearance of states at the Fermi level is correlated to changes in band bending. Metal cluster deposition leads to pinning positions that can be related to surface unrelaxation around the perimeter of the clusters; we find no evidence for metal induced gap states or defect levels.",
author = "Vitomirov, {I. W.} and Aldao, {C. M.} and Matthias Schabel and Waddiil, {G. D.} and Anderson, {S. G.} and Weaver, {J. H.}",
year = "1989",
doi = "10.1116/1.575835",
language = "English (US)",
volume = "7",
pages = "758--764",
journal = "Journal of Vacuum Science and Technology A",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "3",

}

TY - JOUR

T1 - Energies and symmetries in interface formation

T2 - Ln/GaP(110) and Ga/ InP(IIO)

AU - Vitomirov, I. W.

AU - Aldao, C. M.

AU - Schabel, Matthias

AU - Waddiil, G. D.

AU - Anderson, S. G.

AU - Weaver, J. H.

PY - 1989

Y1 - 1989

N2 - We have used high-resolution synchrotron radiation photoemission to study adatom-substrate interactions and growth morphologies for In/GaP(110) and Ga/InP(110). Room-temperature experiments reveal extensive adatom clustering, but also substrate disruption and cation segregation for both interfaces, with greater amounts for Ga/InP(110). Ga deposition in InP(110) at 60 K also results in substrate disruption, but with kinetic trapping of the released In atoms close to the interface and a greater tendency toward layer-by-layer growth. In constrast, the deposition of preformed metallic Ga clusters shows no evidence for substrate disruption. We conclude that atom condensation and coalescence are responsible for disruption, with different activation barriers being present for cluster deposition and atom deposition because of the details of surface and interface bonding. For Ga deposition on ft-type InP(110) at 60 K, the appearance of states at the Fermi level is correlated to changes in band bending. Metal cluster deposition leads to pinning positions that can be related to surface unrelaxation around the perimeter of the clusters; we find no evidence for metal induced gap states or defect levels.

AB - We have used high-resolution synchrotron radiation photoemission to study adatom-substrate interactions and growth morphologies for In/GaP(110) and Ga/InP(110). Room-temperature experiments reveal extensive adatom clustering, but also substrate disruption and cation segregation for both interfaces, with greater amounts for Ga/InP(110). Ga deposition in InP(110) at 60 K also results in substrate disruption, but with kinetic trapping of the released In atoms close to the interface and a greater tendency toward layer-by-layer growth. In constrast, the deposition of preformed metallic Ga clusters shows no evidence for substrate disruption. We conclude that atom condensation and coalescence are responsible for disruption, with different activation barriers being present for cluster deposition and atom deposition because of the details of surface and interface bonding. For Ga deposition on ft-type InP(110) at 60 K, the appearance of states at the Fermi level is correlated to changes in band bending. Metal cluster deposition leads to pinning positions that can be related to surface unrelaxation around the perimeter of the clusters; we find no evidence for metal induced gap states or defect levels.

UR - http://www.scopus.com/inward/record.url?scp=0042453923&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0042453923&partnerID=8YFLogxK

U2 - 10.1116/1.575835

DO - 10.1116/1.575835

M3 - Article

AN - SCOPUS:0042453923

VL - 7

SP - 758

EP - 764

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 3

ER -