Energies and symmetries in interface formation: Ln/GaP(110) and Ga/ InP(IIO)

I. W. Vitomirov, C. M. Aldao, M. Schabel, G. D. Waddiil, S. G. Anderson, J. H. Weaver

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

We have used high-resolution synchrotron radiation photoemission to study adatom-substrate interactions and growth morphologies for In/GaP(110) and Ga/InP(110). Room-temperature experiments reveal extensive adatom clustering, but also substrate disruption and cation segregation for both interfaces, with greater amounts for Ga/InP(110). Ga deposition in InP(110) at 60 K also results in substrate disruption, but with kinetic trapping of the released In atoms close to the interface and a greater tendency toward layer-by-layer growth. In constrast, the deposition of preformed metallic Ga clusters shows no evidence for substrate disruption. We conclude that atom condensation and coalescence are responsible for disruption, with different activation barriers being present for cluster deposition and atom deposition because of the details of surface and interface bonding. For Ga deposition on ft-type InP(110) at 60 K, the appearance of states at the Fermi level is correlated to changes in band bending. Metal cluster deposition leads to pinning positions that can be related to surface unrelaxation around the perimeter of the clusters; we find no evidence for metal induced gap states or defect levels.

Original languageEnglish (US)
Pages (from-to)758-764
Number of pages7
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume7
Issue number3
DOIs
StatePublished - May 1989

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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