Deposition and Characterization of Thin Ferroelectric Lead Lanthanum Zirconate Titanate (PLZT) Films on Sapphire For Spatial Light Modulators Applications

S. Krishnakumar; V. H. Ozguz; C. Fan; C. Cozzolino; S. C. Esener; S. H. Lee

doi:10.1109/58.108856

Deposition and Characterization of Thin Ferroelectric Lead Lanthanum Zirconate Titanate (PLZT) Films on Sapphire For Spatial Light Modulators Applications

S. Krishnakumar, V. H. Ozguz, C. Fan, C. Cozzolino, S. C. Esener, S. H. Lee

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

Ferroelectric lead lanthanum zirconate titanate (PLZT) films are deposited on r-plane sapphire using R-F triode magnetron sputtering. Perovskite PLZT films with the desired composition (9/65/35) are obtained using compensated deposition techniques around 500°C and post deposition annealing at 650°C. The deposited films exhibit good optical and electrooptical properties. The room temperature dielectric constant of the films was 1800 at 10 KHz. The refractive index of the films was in the range 2.2-2.5. The films showed a quadratic E-O effect with R = 0.6 x 10-16 m2/V2. The development of PLZT on silicon-on-sapphire smart spatial light modulators, using these films, is also explored.

Original language	English (US)
Pages (from-to)	585-590
Number of pages	6
Journal	IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
Volume	38
Issue number	6
DOIs	https://doi.org/10.1109/58.108856
State	Published - Nov 1991
Externally published	Yes

ASJC Scopus subject areas

Instrumentation
Acoustics and Ultrasonics
Electrical and Electronic Engineering

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10.1109/58.108856

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Krishnakumar, S., Ozguz, V. H., Fan, C., Cozzolino, C., Esener, S. C., & Lee, S. H. (1991). Deposition and Characterization of Thin Ferroelectric Lead Lanthanum Zirconate Titanate (PLZT) Films on Sapphire For Spatial Light Modulators Applications. IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 38(6), 585-590. https://doi.org/10.1109/58.108856

Deposition and Characterization of Thin Ferroelectric Lead Lanthanum Zirconate Titanate (PLZT) Films on Sapphire For Spatial Light Modulators Applications. / Krishnakumar, S.; Ozguz, V. H.; Fan, C. et al.
In: IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, Vol. 38, No. 6, 11.1991, p. 585-590.

Research output: Contribution to journal › Article › peer-review

Krishnakumar, S, Ozguz, VH, Fan, C, Cozzolino, C, Esener, SC & Lee, SH 1991, 'Deposition and Characterization of Thin Ferroelectric Lead Lanthanum Zirconate Titanate (PLZT) Films on Sapphire For Spatial Light Modulators Applications', IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, vol. 38, no. 6, pp. 585-590. https://doi.org/10.1109/58.108856

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title = "Deposition and Characterization of Thin Ferroelectric Lead Lanthanum Zirconate Titanate (PLZT) Films on Sapphire For Spatial Light Modulators Applications",

abstract = "Ferroelectric lead lanthanum zirconate titanate (PLZT) films are deposited on r-plane sapphire using R-F triode magnetron sputtering. Perovskite PLZT films with the desired composition (9/65/35) are obtained using compensated deposition techniques around 500°C and post deposition annealing at 650°C. The deposited films exhibit good optical and electrooptical properties. The room temperature dielectric constant of the films was 1800 at 10 KHz. The refractive index of the films was in the range 2.2-2.5. The films showed a quadratic E-O effect with R = 0.6 x 10-16 m2/V2. The development of PLZT on silicon-on-sapphire smart spatial light modulators, using these films, is also explored.",

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note = "Funding Information: Manuscript received Iune 13, 1990; revised October 22, 1990; accepted October 23, 1990. This work was supported by the Defense Advanced Research Projects Agency under the management of San Diego University Foundation under contract No. 446209-40229. The authors are with the University of California, San Diego. ECE Department, R-007, La Jolla, CA 92093-0407. IEEE Log Number 9102234.",

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AU - Cozzolino, C.

AU - Esener, S. C.

AU - Lee, S. H.

N1 - Funding Information: Manuscript received Iune 13, 1990; revised October 22, 1990; accepted October 23, 1990. This work was supported by the Defense Advanced Research Projects Agency under the management of San Diego University Foundation under contract No. 446209-40229. The authors are with the University of California, San Diego. ECE Department, R-007, La Jolla, CA 92093-0407. IEEE Log Number 9102234.

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AB - Ferroelectric lead lanthanum zirconate titanate (PLZT) films are deposited on r-plane sapphire using R-F triode magnetron sputtering. Perovskite PLZT films with the desired composition (9/65/35) are obtained using compensated deposition techniques around 500°C and post deposition annealing at 650°C. The deposited films exhibit good optical and electrooptical properties. The room temperature dielectric constant of the films was 1800 at 10 KHz. The refractive index of the films was in the range 2.2-2.5. The films showed a quadratic E-O effect with R = 0.6 x 10-16 m2/V2. The development of PLZT on silicon-on-sapphire smart spatial light modulators, using these films, is also explored.

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Deposition and Characterization of Thin Ferroelectric Lead Lanthanum Zirconate Titanate (PLZT) Films on Sapphire For Spatial Light Modulators Applications

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