CRYSTALLIZATION OF SILICON ON ELECTRO-OPTIC PLZT BY A LASER BEAM MODULATED IN SHAPE AND INTENSITY PROFILE.

T. H. Lin, M. L. Burgener, Sadik Esener, S. H. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

PLZT, a ferroelectric material with a high quadratic electro-optic coefficient, is combined with silicon technology via chemical vapor deposition to enable the realization of Si/PLZT spatial light modulators. Laser crystallization is required to produce device quality silicon deposited on PLZT. The critical issues in the laser crystallization are (i) achieving crystallization in the absence of a good seed, and (ii) preventing damage to the PLZT. To prevent PLZT damage during the laser heating, a 3. 5 mu m silicon dioxide layer is used as a thermal buffer between the silicon and the PLZT and the effective scanning time is shortened to 100 mu s. A double humped cw argon ion laser with a shaped beam is used to achieve successful crystallization with good surface smoothness and large grain size. This technology and devices fabricated on these samples will be discussed.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsMichael O. Thompson, S.Thomas Picraux, James S. Williams
PublisherMaterials Research Soc
Pages135-140
Number of pages6
Volume74
ISBN (Print)0931837405
StatePublished - 1987
Externally publishedYes
EventBeam-Solid Interact and Transient Processes - Boston, MA, USA
Duration: Dec 1 1986Dec 4 1986

Other

OtherBeam-Solid Interact and Transient Processes
CityBoston, MA, USA
Period12/1/8612/4/86

Fingerprint

Silicon
Electrooptical effects
Crystallization
Laser beams
Lasers
Laser heating
Argon
Silicon Dioxide
Ferroelectric materials
Seed
Chemical vapor deposition
Buffers
Silica
Ions
Scanning

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Lin, T. H., Burgener, M. L., Esener, S., & Lee, S. H. (1987). CRYSTALLIZATION OF SILICON ON ELECTRO-OPTIC PLZT BY A LASER BEAM MODULATED IN SHAPE AND INTENSITY PROFILE. In M. O. Thompson, S. T. Picraux, & J. S. Williams (Eds.), Materials Research Society Symposia Proceedings (Vol. 74, pp. 135-140). Materials Research Soc.

CRYSTALLIZATION OF SILICON ON ELECTRO-OPTIC PLZT BY A LASER BEAM MODULATED IN SHAPE AND INTENSITY PROFILE. / Lin, T. H.; Burgener, M. L.; Esener, Sadik; Lee, S. H.

Materials Research Society Symposia Proceedings. ed. / Michael O. Thompson; S.Thomas Picraux; James S. Williams. Vol. 74 Materials Research Soc, 1987. p. 135-140.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lin, TH, Burgener, ML, Esener, S & Lee, SH 1987, CRYSTALLIZATION OF SILICON ON ELECTRO-OPTIC PLZT BY A LASER BEAM MODULATED IN SHAPE AND INTENSITY PROFILE. in MO Thompson, ST Picraux & JS Williams (eds), Materials Research Society Symposia Proceedings. vol. 74, Materials Research Soc, pp. 135-140, Beam-Solid Interact and Transient Processes, Boston, MA, USA, 12/1/86.
Lin TH, Burgener ML, Esener S, Lee SH. CRYSTALLIZATION OF SILICON ON ELECTRO-OPTIC PLZT BY A LASER BEAM MODULATED IN SHAPE AND INTENSITY PROFILE. In Thompson MO, Picraux ST, Williams JS, editors, Materials Research Society Symposia Proceedings. Vol. 74. Materials Research Soc. 1987. p. 135-140
Lin, T. H. ; Burgener, M. L. ; Esener, Sadik ; Lee, S. H. / CRYSTALLIZATION OF SILICON ON ELECTRO-OPTIC PLZT BY A LASER BEAM MODULATED IN SHAPE AND INTENSITY PROFILE. Materials Research Society Symposia Proceedings. editor / Michael O. Thompson ; S.Thomas Picraux ; James S. Williams. Vol. 74 Materials Research Soc, 1987. pp. 135-140
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abstract = "PLZT, a ferroelectric material with a high quadratic electro-optic coefficient, is combined with silicon technology via chemical vapor deposition to enable the realization of Si/PLZT spatial light modulators. Laser crystallization is required to produce device quality silicon deposited on PLZT. The critical issues in the laser crystallization are (i) achieving crystallization in the absence of a good seed, and (ii) preventing damage to the PLZT. To prevent PLZT damage during the laser heating, a 3. 5 mu m silicon dioxide layer is used as a thermal buffer between the silicon and the PLZT and the effective scanning time is shortened to 100 mu s. A double humped cw argon ion laser with a shaped beam is used to achieve successful crystallization with good surface smoothness and large grain size. This technology and devices fabricated on these samples will be discussed.",
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