Characterization of dielectric and electro-optic properties of PLZT 9/65/35 films on sapphire for electro-optic applications

Bahadir Tunaboylu, Phil Harvey, Sadik Esener

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Lead lanthanum zirconate titanate (PLZT) thin films were deposited on r-plane sapphire at low temperatures by RF triade magnetron sputtering using lead compensated hot-pressed targets. To obtain fully perovskite phase in the films, two types of post-deposition processing were investigated: raMd thermal annealing (RTA) and furnace annealing (FA). Dielectric and electro-optic properties of PLZT films were found to be strongly dependent on annealing conditions. T le peak dielectric constant of the films were 1200 and 2800 with Curie temperatures of 110°C and 190°C after RTA ami FA processing, respectively. The dielectric losses in the films were fairly low; tan deltas were less than 0.02 after 11TA aud less than 0.04 after FA processing. The films showed good optical transmission characteristics after annealing and an anomalously large effective quadratic electro-opl ic effect was observed in one furnace annealed film.

Original languageEnglish (US)
Pages (from-to)1105-1112
Number of pages8
JournalIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
Volume45
Issue number4
DOIs
StatePublished - 1998
Externally publishedYes

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Electrooptical effects
Sapphire
electro-optics
sapphire
Annealing
annealing
furnaces
Furnaces
Processing
Lead
Lanthanum
Dielectric losses
Curie temperature
Light transmission
lanthanum
dielectric loss
Perovskite
Magnetron sputtering
magnetron sputtering
Permittivity

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Acoustics and Ultrasonics

Cite this

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title = "Characterization of dielectric and electro-optic properties of PLZT 9/65/35 films on sapphire for electro-optic applications",
abstract = "Lead lanthanum zirconate titanate (PLZT) thin films were deposited on r-plane sapphire at low temperatures by RF triade magnetron sputtering using lead compensated hot-pressed targets. To obtain fully perovskite phase in the films, two types of post-deposition processing were investigated: raMd thermal annealing (RTA) and furnace annealing (FA). Dielectric and electro-optic properties of PLZT films were found to be strongly dependent on annealing conditions. T le peak dielectric constant of the films were 1200 and 2800 with Curie temperatures of 110°C and 190°C after RTA ami FA processing, respectively. The dielectric losses in the films were fairly low; tan deltas were less than 0.02 after 11TA aud less than 0.04 after FA processing. The films showed good optical transmission characteristics after annealing and an anomalously large effective quadratic electro-opl ic effect was observed in one furnace annealed film.",
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T1 - Characterization of dielectric and electro-optic properties of PLZT 9/65/35 films on sapphire for electro-optic applications

AU - Tunaboylu, Bahadir

AU - Harvey, Phil

AU - Esener, Sadik

PY - 1998

Y1 - 1998

N2 - Lead lanthanum zirconate titanate (PLZT) thin films were deposited on r-plane sapphire at low temperatures by RF triade magnetron sputtering using lead compensated hot-pressed targets. To obtain fully perovskite phase in the films, two types of post-deposition processing were investigated: raMd thermal annealing (RTA) and furnace annealing (FA). Dielectric and electro-optic properties of PLZT films were found to be strongly dependent on annealing conditions. T le peak dielectric constant of the films were 1200 and 2800 with Curie temperatures of 110°C and 190°C after RTA ami FA processing, respectively. The dielectric losses in the films were fairly low; tan deltas were less than 0.02 after 11TA aud less than 0.04 after FA processing. The films showed good optical transmission characteristics after annealing and an anomalously large effective quadratic electro-opl ic effect was observed in one furnace annealed film.

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