Lead lanthanum zirconate titanate (PLZT) thin films were deposited on r-plane sapphire at low temperatures by RF triade magnetron sputtering using lead compensated hot-pressed targets. To obtain fully perovskite phase in the films, two types of post-deposition processing were investigated: raMd thermal annealing (RTA) and furnace annealing (FA). Dielectric and electro-optic properties of PLZT films were found to be strongly dependent on annealing conditions. T le peak dielectric constant of the films were 1200 and 2800 with Curie temperatures of 110°C and 190°C after RTA ami FA processing, respectively. The dielectric losses in the films were fairly low; tan deltas were less than 0.02 after 11TA aud less than 0.04 after FA processing. The films showed good optical transmission characteristics after annealing and an anomalously large effective quadratic electro-opl ic effect was observed in one furnace annealed film.
|Original language||English (US)|
|Number of pages||8|
|Journal||IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control|
|State||Published - Dec 1 1998|
ASJC Scopus subject areas
- Acoustics and Ultrasonics
- Electrical and Electronic Engineering