Characterization of dielectric and electro-optic properties of PLZT 9/65/35 films on sapphire for electro-optic applications

Bahadir Tunaboylu, Phil Harvey, Sadik C. Esener

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Lead lanthanum zirconate titanate (PLZT) thin films were deposited on r-plane sapphire at low temperatures by RF triade magnetron sputtering using lead compensated hot-pressed targets. To obtain fully perovskite phase in the films, two types of post-deposition processing were investigated: raMd thermal annealing (RTA) and furnace annealing (FA). Dielectric and electro-optic properties of PLZT films were found to be strongly dependent on annealing conditions. T le peak dielectric constant of the films were 1200 and 2800 with Curie temperatures of 110°C and 190°C after RTA ami FA processing, respectively. The dielectric losses in the films were fairly low; tan deltas were less than 0.02 after 11TA aud less than 0.04 after FA processing. The films showed good optical transmission characteristics after annealing and an anomalously large effective quadratic electro-opl ic effect was observed in one furnace annealed film.

Original languageEnglish (US)
Pages (from-to)1105-1112
Number of pages8
JournalIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
Volume45
Issue number4
DOIs
StatePublished - Dec 1 1998
Externally publishedYes

ASJC Scopus subject areas

  • Instrumentation
  • Acoustics and Ultrasonics
  • Electrical and Electronic Engineering

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