Abstract
Si(100) and Si(111) surfaces both have singly occupied dangling bonds in their lowest-energy configurations. A single monolayer of arsenic has been shown to passivate the surfaces and lead to simple, nearly ideal (2×1) and (1×1) reconstructions, respectively. The bare Si(110) surface also has a complex reconstruction and high surface free energy. As presented here it can be shown theoretically that termination of Si(110) with a monolayer of As lowers the free energy of the ideal surface by 1.1 eV/(As atom). We would therefore expect that As adsorption would again lead to a topographically simple passivated structure. Using x-ray-photoemission spectroscopy, low-energy electron diffraction, and scanning tunneling microscopy we show here that, to the contrary, the Si(110):As surface, in fact consists of 2/3 monolayer of As in a two-dimensional corrugated unit cell with real-space unit vectors 5± and 3±+3, where ±=[001] and =1/2[110]. We propose a model for the surface which consists only of fourfold-coordinated Si atoms and threefold-coordinated As atoms.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 9589-9596 |
| Number of pages | 8 |
| Journal | Physical Review B |
| Volume | 47 |
| Issue number | 15 |
| DOIs | |
| State | Published - 1993 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Arsenic termination of the Si(110) surface. / Biegelsen, D. K.; Bringans, R. D.; Northrup, J. E.; Schabel, Matthias; Swartz, L. E.
In: Physical Review B, Vol. 47, No. 15, 1993, p. 9589-9596.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Arsenic termination of the Si(110) surface
AU - Biegelsen, D. K.
AU - Bringans, R. D.
AU - Northrup, J. E.
AU - Schabel, Matthias
AU - Swartz, L. E.
PY - 1993
Y1 - 1993
N2 - Si(100) and Si(111) surfaces both have singly occupied dangling bonds in their lowest-energy configurations. A single monolayer of arsenic has been shown to passivate the surfaces and lead to simple, nearly ideal (2×1) and (1×1) reconstructions, respectively. The bare Si(110) surface also has a complex reconstruction and high surface free energy. As presented here it can be shown theoretically that termination of Si(110) with a monolayer of As lowers the free energy of the ideal surface by 1.1 eV/(As atom). We would therefore expect that As adsorption would again lead to a topographically simple passivated structure. Using x-ray-photoemission spectroscopy, low-energy electron diffraction, and scanning tunneling microscopy we show here that, to the contrary, the Si(110):As surface, in fact consists of 2/3 monolayer of As in a two-dimensional corrugated unit cell with real-space unit vectors 5± and 3±+3, where ±=[001] and =1/2[110]. We propose a model for the surface which consists only of fourfold-coordinated Si atoms and threefold-coordinated As atoms.
AB - Si(100) and Si(111) surfaces both have singly occupied dangling bonds in their lowest-energy configurations. A single monolayer of arsenic has been shown to passivate the surfaces and lead to simple, nearly ideal (2×1) and (1×1) reconstructions, respectively. The bare Si(110) surface also has a complex reconstruction and high surface free energy. As presented here it can be shown theoretically that termination of Si(110) with a monolayer of As lowers the free energy of the ideal surface by 1.1 eV/(As atom). We would therefore expect that As adsorption would again lead to a topographically simple passivated structure. Using x-ray-photoemission spectroscopy, low-energy electron diffraction, and scanning tunneling microscopy we show here that, to the contrary, the Si(110):As surface, in fact consists of 2/3 monolayer of As in a two-dimensional corrugated unit cell with real-space unit vectors 5± and 3±+3, where ±=[001] and =1/2[110]. We propose a model for the surface which consists only of fourfold-coordinated Si atoms and threefold-coordinated As atoms.
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U2 - 10.1103/PhysRevB.47.9589
DO - 10.1103/PhysRevB.47.9589
M3 - Article
AN - SCOPUS:0002862146
VL - 47
SP - 9589
EP - 9596
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 0163-1829
IS - 15
ER -