TY - JOUR
T1 - Analysis of hot-carrier luminescence for infrared single-photon upconversion and readout
AU - Finkelstein, Hod
AU - Lo, Yu Hwa
AU - Esener, Sadik
N1 - Funding Information:
Manuscript received January 1, 2007; revised May 29, 2007. This work was supported in part by the U.S. Army Research Office under Grant W911NF-05-1-0243.
PY - 2007
Y1 - 2007
N2 - We propose and analyze a new method for single-photon wavelength up-conversion using optical coupling between a primary infrared (IR) single-photon avalanche diode (SPAD) and a complementary metal oxide semiconductor (CMOS) silicon SPAD, which are fused through a silicon dioxide passivation layer. A primary IR photon induces an avalanche in the IR SPAD. The photons produced by hot-carrier recombination are subsequently sensed by the silicon SPAD, thus, allowing for on-die data processing. Because the devices are fused through their passivation layers, lattice mismatch issues between the semiconductor materials are avoided. We develop a model for calculating the conversion efficiency of the device, and use realistic device parameters to estimate up to 97% upconversion efficiency and 33% system efficiency, limited by the IR detector alone. The new scheme offers a low-cost means to manufacture dense IR-SPAD arrays, while significantly reducing their afterpulsing. We show that this high-speed compact method for upconverting IR photons is feasible and efficient.
AB - We propose and analyze a new method for single-photon wavelength up-conversion using optical coupling between a primary infrared (IR) single-photon avalanche diode (SPAD) and a complementary metal oxide semiconductor (CMOS) silicon SPAD, which are fused through a silicon dioxide passivation layer. A primary IR photon induces an avalanche in the IR SPAD. The photons produced by hot-carrier recombination are subsequently sensed by the silicon SPAD, thus, allowing for on-die data processing. Because the devices are fused through their passivation layers, lattice mismatch issues between the semiconductor materials are avoided. We develop a model for calculating the conversion efficiency of the device, and use realistic device parameters to estimate up to 97% upconversion efficiency and 33% system efficiency, limited by the IR detector alone. The new scheme offers a low-cost means to manufacture dense IR-SPAD arrays, while significantly reducing their afterpulsing. We show that this high-speed compact method for upconverting IR photons is feasible and efficient.
KW - Avalanche photodiodes
KW - single photon detectors
KW - wavelength upconversion
UR - http://www.scopus.com/inward/record.url?scp=85008025485&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85008025485&partnerID=8YFLogxK
U2 - 10.1109/JSTQE.2007.901884
DO - 10.1109/JSTQE.2007.901884
M3 - Article
AN - SCOPUS:85008025485
SN - 1077-260X
VL - 13
SP - 959
EP - 966
JO - IEEE Journal on Selected Topics in Quantum Electronics
JF - IEEE Journal on Selected Topics in Quantum Electronics
IS - 4
ER -