An ultrafast Geiger-mode single photon avalanche diode in 0.18 μm CMOS technology

Hod Finkelstein, Mark J. Hsu, Sadik Esener

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We demonstrate a new single-photon avalanche diode (SPAD) device, which utilizes the silicon-dioxide shallow-trench isolation ( STI) structure common to all deep-submicron CMOS technologies, both for junction planarization and as an area-efficient guard-ring. This makes it possible to achieve an order-of-magnitude improvement in fill factor and a significant reduction in pixel area compared with existing CMOS SPADs, and results in improved SPAD performance. We present numerical simulations as well preliminary experimental results from a test chip, which was manufactured in an IBM 0.18 μm CMOS technology, and which incorporates the devices. With these new and efficient structures, 12 μm-pitch pixels with sub-10ns dead times are achievable without requiring active recharge, creating the opportunity to integrate large arrays of these ultra-fast SPADs for use in biological imaging systems.

Original languageEnglish (US)
Title of host publicationAdvanced Photon Counting Techniques
Volume6372
DOIs
StatePublished - 2006
Externally publishedYes
EventAdvanced Photon Counting Techniques - Boston, MA, United States
Duration: Oct 1 2006Oct 3 2006

Other

OtherAdvanced Photon Counting Techniques
CountryUnited States
CityBoston, MA
Period10/1/0610/3/06

Fingerprint

Avalanche diodes
avalanche diodes
CMOS
Photons
Pixels
photons
pixels
Imaging systems
Silica
isolation
Computer simulation
chips
silicon dioxide
rings
simulation

Keywords

  • Avalanche breakdown
  • Avalanche photodiodes
  • Biological imaging
  • Photodetectors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Finkelstein, H., Hsu, M. J., & Esener, S. (2006). An ultrafast Geiger-mode single photon avalanche diode in 0.18 μm CMOS technology. In Advanced Photon Counting Techniques (Vol. 6372). [63720W] https://doi.org/10.1117/12.705259

An ultrafast Geiger-mode single photon avalanche diode in 0.18 μm CMOS technology. / Finkelstein, Hod; Hsu, Mark J.; Esener, Sadik.

Advanced Photon Counting Techniques. Vol. 6372 2006. 63720W.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Finkelstein, H, Hsu, MJ & Esener, S 2006, An ultrafast Geiger-mode single photon avalanche diode in 0.18 μm CMOS technology. in Advanced Photon Counting Techniques. vol. 6372, 63720W, Advanced Photon Counting Techniques, Boston, MA, United States, 10/1/06. https://doi.org/10.1117/12.705259
Finkelstein H, Hsu MJ, Esener S. An ultrafast Geiger-mode single photon avalanche diode in 0.18 μm CMOS technology. In Advanced Photon Counting Techniques. Vol. 6372. 2006. 63720W https://doi.org/10.1117/12.705259
Finkelstein, Hod ; Hsu, Mark J. ; Esener, Sadik. / An ultrafast Geiger-mode single photon avalanche diode in 0.18 μm CMOS technology. Advanced Photon Counting Techniques. Vol. 6372 2006.
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