@inproceedings{e3898aef9c1d458c83cd5cbca8b45507,
title = "An ultrafast Geiger-mode single photon avalanche diode in 0.18 μm CMOS technology",
abstract = "We demonstrate a new single-photon avalanche diode (SPAD) device, which utilizes the silicon-dioxide shallow-trench isolation ( STI) structure common to all deep-submicron CMOS technologies, both for junction planarization and as an area-efficient guard-ring. This makes it possible to achieve an order-of-magnitude improvement in fill factor and a significant reduction in pixel area compared with existing CMOS SPADs, and results in improved SPAD performance. We present numerical simulations as well preliminary experimental results from a test chip, which was manufactured in an IBM 0.18 μm CMOS technology, and which incorporates the devices. With these new and efficient structures, 12 μm-pitch pixels with sub-10ns dead times are achievable without requiring active recharge, creating the opportunity to integrate large arrays of these ultra-fast SPADs for use in biological imaging systems.",
keywords = "Avalanche breakdown, Avalanche photodiodes, Biological imaging, Photodetectors",
author = "Hod Finkelstein and Hsu, {Mark J.} and Sadik Esener",
year = "2006",
doi = "10.1117/12.705259",
language = "English (US)",
isbn = "0819464708",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Advanced Photon Counting Techniques",
note = "Advanced Photon Counting Techniques ; Conference date: 01-10-2006 Through 03-10-2006",
}