An implant-free AlGaAs/GaAs HBT IC technology incorporating 1.4 THz Schottky diodes

S. J. Prasad; B. Vetanen; C. Haynes; S. Park; I. Beers; S. Diamond; G. Pubanz; J. Ebner; S. Sanielevici; A. Agoston

An implant-free AlGaAs/GaAs HBT IC technology incorporating 1.4 THz Schottky diodes

S. J. Prasad, B. Vetanen, C. Haynes, S. Park, I. Beers, S. Diamond, G. Pubanz, J. Ebner, S. Sanielevici, A. Agoston

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A non-self-aligned HBT (heterojunction bipolar transistor) process capable of 45 GHz f_T and f_max with 1.4-THz Schottky diodes is reported. An HBT divide-by-eight prescalar circuit clocks at 13.5 GHz and a pulser circuit using Schottky diodes demonstrates 8.6-ps rise time. The Schottky diodes are suitable for sampler/pulser applications as well as nichrome resistors, MIM capacitors, and air-bridge inductors. This process does not use ion-implantation for isolation or reduction of collector capacitance.

Original language	English (US)
Title of host publication	Proceedings of the 1991 Bipolar Circuits and Technology Meeting
Publisher	Publ by IEEE
Pages	79-82
Number of pages	4
ISBN (Print)	078030103X
State	Published - 1992
Externally published	Yes
Event	Proceedings of the 1991 Bipolar Circuits and Technology Meeting - Minneapolis, MN, USA Duration: Sep 9 1991 → Sep 10 1991

Publication series

Name	Proceedings of the 1991 Bipolar Circuits and Technology Meeting

Conference

Conference	Proceedings of the 1991 Bipolar Circuits and Technology Meeting
City	Minneapolis, MN, USA
Period	9/9/91 → 9/10/91

ASJC Scopus subject areas

General Engineering

Cite this

Prasad, S. J., Vetanen, B., Haynes, C., Park, S., Beers, I., Diamond, S., Pubanz, G., Ebner, J., Sanielevici, S., & Agoston, A. (1992). An implant-free AlGaAs/GaAs HBT IC technology incorporating 1.4 THz Schottky diodes. In Proceedings of the 1991 Bipolar Circuits and Technology Meeting (pp. 79-82). (Proceedings of the 1991 Bipolar Circuits and Technology Meeting). Publ by IEEE.

An implant-free AlGaAs/GaAs HBT IC technology incorporating 1.4 THz Schottky diodes. / Prasad, S. J.; Vetanen, B.; Haynes, C. et al.
Proceedings of the 1991 Bipolar Circuits and Technology Meeting. Publ by IEEE, 1992. p. 79-82 (Proceedings of the 1991 Bipolar Circuits and Technology Meeting).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Prasad, SJ, Vetanen, B, Haynes, C, Park, S, Beers, I, Diamond, S, Pubanz, G, Ebner, J, Sanielevici, S & Agoston, A 1992, An implant-free AlGaAs/GaAs HBT IC technology incorporating 1.4 THz Schottky diodes. in Proceedings of the 1991 Bipolar Circuits and Technology Meeting. Proceedings of the 1991 Bipolar Circuits and Technology Meeting, Publ by IEEE, pp. 79-82, Proceedings of the 1991 Bipolar Circuits and Technology Meeting, Minneapolis, MN, USA, 9/9/91.

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abstract = "A non-self-aligned HBT (heterojunction bipolar transistor) process capable of 45 GHz fT and fmax with 1.4-THz Schottky diodes is reported. An HBT divide-by-eight prescalar circuit clocks at 13.5 GHz and a pulser circuit using Schottky diodes demonstrates 8.6-ps rise time. The Schottky diodes are suitable for sampler/pulser applications as well as nichrome resistors, MIM capacitors, and air-bridge inductors. This process does not use ion-implantation for isolation or reduction of collector capacitance.",

author = "Prasad, {S. J.} and B. Vetanen and C. Haynes and S. Park and I. Beers and S. Diamond and G. Pubanz and J. Ebner and S. Sanielevici and A. Agoston",

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AU - Prasad, S. J.

AU - Vetanen, B.

AU - Haynes, C.

AU - Park, S.

AU - Beers, I.

AU - Diamond, S.

AU - Pubanz, G.

AU - Ebner, J.

AU - Sanielevici, S.

AU - Agoston, A.

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N2 - A non-self-aligned HBT (heterojunction bipolar transistor) process capable of 45 GHz fT and fmax with 1.4-THz Schottky diodes is reported. An HBT divide-by-eight prescalar circuit clocks at 13.5 GHz and a pulser circuit using Schottky diodes demonstrates 8.6-ps rise time. The Schottky diodes are suitable for sampler/pulser applications as well as nichrome resistors, MIM capacitors, and air-bridge inductors. This process does not use ion-implantation for isolation or reduction of collector capacitance.

AB - A non-self-aligned HBT (heterojunction bipolar transistor) process capable of 45 GHz fT and fmax with 1.4-THz Schottky diodes is reported. An HBT divide-by-eight prescalar circuit clocks at 13.5 GHz and a pulser circuit using Schottky diodes demonstrates 8.6-ps rise time. The Schottky diodes are suitable for sampler/pulser applications as well as nichrome resistors, MIM capacitors, and air-bridge inductors. This process does not use ion-implantation for isolation or reduction of collector capacitance.

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An implant-free AlGaAs/GaAs HBT IC technology incorporating 1.4 THz Schottky diodes

Abstract

Publication series

Conference

ASJC Scopus subject areas

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