A 45GHz AlGaAs/GaAs HBT IC Technology without Ion-Implantation

S. J. Prasad, B. Vetanen, C. Haynes, S. Park, I. Beers, S. Diamond, G. Pubanz, J. Ebner, S. Sanielevici, A. Agoston

Research output: Contribution to journalArticlepeer-review


A 45GHz HBT IC technology with 1.4THz Schottky diodes is described. The process is mesa isolated and implant-free. The process integrates NiCr resistors, MIM capacitors and air-bridge inductors. A divide-by-eight prescaler shows good performance up to 13.5GHz. A pulser circuit using the Schottky diodes produced a voltage pulse with 10.35ps rise time.

Original languageEnglish (US)
Pages (from-to)413-416
Number of pages4
JournalMicroelectronic Engineering
Issue number1-4
StatePublished - Sep 1992
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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