A 45 GHz AlGaAs/GaAs HBT IC technology

S. J. Prasad; B. Vetanen; C. Haynes; S. Park; I. Beers; S. Diamond; G. Pubanz; J. Ebner; S. Sanielevici; A. Agoston

A 45 GHz AlGaAs/GaAs HBT IC technology

S. J. Prasad, B. Vetanen, C. Haynes, S. Park, I. Beers, S. Diamond, G. Pubanz, J. Ebner, S. Sanielevici, A. Agoston

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A non-self-aligned HBT (heterojunction bipolar transistor) IC process with f_T and f_max of 45 GHz is reported. The process provides 1.4 THz Schottky diodes, nichrome resistors, MIM capacitors, and air-bridge inductors. The process does not use any ion implantation. An HBT prescalar circuit designed with this process clocks at 13.5 GHz. A pulser circuit using Schottky diodes demonstrates 8.6 ps risetime.

Original language	English (US)
Title of host publication	Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
Publisher	Publ by IEEE
Pages	121-124
Number of pages	4
ISBN (Print)	078030196X
State	Published - Jan 1992
Externally published	Yes
Event	13th Annual GaAs IC Symposium Technical Digest - Monterey, CA, USA Duration: Oct 20 1991 → Oct 23 1991

Publication series

Name	Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Conference

Conference	13th Annual GaAs IC Symposium Technical Digest
City	Monterey, CA, USA
Period	10/20/91 → 10/23/91

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Prasad, SJ, Vetanen, B, Haynes, C, Park, S, Beers, I, Diamond, S, Pubanz, G, Ebner, J, Sanielevici, S & Agoston, A 1992, A 45 GHz AlGaAs/GaAs HBT IC technology. in Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit), Publ by IEEE, pp. 121-124, 13th Annual GaAs IC Symposium Technical Digest, Monterey, CA, USA, 10/20/91.

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abstract = "A non-self-aligned HBT (heterojunction bipolar transistor) IC process with fT and fmax of 45 GHz is reported. The process provides 1.4 THz Schottky diodes, nichrome resistors, MIM capacitors, and air-bridge inductors. The process does not use any ion implantation. An HBT prescalar circuit designed with this process clocks at 13.5 GHz. A pulser circuit using Schottky diodes demonstrates 8.6 ps risetime.",

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year = "1992",

month = jan,

language = "English (US)",

isbn = "078030196X",

series = "Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)",

publisher = "Publ by IEEE",

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T1 - A 45 GHz AlGaAs/GaAs HBT IC technology

AU - Prasad, S. J.

AU - Vetanen, B.

AU - Haynes, C.

AU - Park, S.

AU - Beers, I.

AU - Diamond, S.

AU - Pubanz, G.

AU - Ebner, J.

AU - Sanielevici, S.

AU - Agoston, A.

PY - 1992/1

Y1 - 1992/1

N2 - A non-self-aligned HBT (heterojunction bipolar transistor) IC process with fT and fmax of 45 GHz is reported. The process provides 1.4 THz Schottky diodes, nichrome resistors, MIM capacitors, and air-bridge inductors. The process does not use any ion implantation. An HBT prescalar circuit designed with this process clocks at 13.5 GHz. A pulser circuit using Schottky diodes demonstrates 8.6 ps risetime.

AB - A non-self-aligned HBT (heterojunction bipolar transistor) IC process with fT and fmax of 45 GHz is reported. The process provides 1.4 THz Schottky diodes, nichrome resistors, MIM capacitors, and air-bridge inductors. The process does not use any ion implantation. An HBT prescalar circuit designed with this process clocks at 13.5 GHz. A pulser circuit using Schottky diodes demonstrates 8.6 ps risetime.

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UR - http://www.scopus.com/inward/citedby.url?scp=0026763620&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0026763620

SN - 078030196X

T3 - Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

SP - 121

EP - 124

BT - Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

PB - Publ by IEEE

T2 - 13th Annual GaAs IC Symposium Technical Digest

Y2 - 20 October 1991 through 23 October 1991

ER -

A 45 GHz AlGaAs/GaAs HBT IC technology

Abstract

Publication series

Conference

ASJC Scopus subject areas

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